Allicdata Part #: | TPC8132LQ(S-ND |
Manufacturer Part#: |
TPC8132,LQ(S |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 40V 7A 8SOP |
More Detail: | P-Channel 40V 7A (Ta) 1W (Ta) Surface Mount 8-SOP |
DataSheet: | TPC8132,LQ(S Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.25654 |
Vgs(th) (Max) @ Id: | 2V @ 200µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1580pF @ 10V |
Vgs (Max): | +20V, -25V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | U-MOSVI |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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:The TPC8132LQ is a small signal dual N-channel MOSFET transistor with a low threshold voltage. This type of transistor has a variety of applications and is used in a wide range of electronic devices, from small portable electronic devices to large industrial machinery. Its low power consumption and small size make it a popular choice for many applications.
The transistor has two distinct elements - the source and drain. The source is the area where the electrons enter the transistor, and the drain is the area they leave. In between is the gate, which can be used to control the movement of electrons, allowing them to travel from the source to the drain. When a voltage is applied to the gate, electrons will flow from the source to the drain and be driven by the voltage. This is known as a field-effect transistor (FET) and is used in a wide range of applications, from amplifying signals and switching circuits to controlling the movement of motors.
MOSFET transistors are the most common type of Field Effect Transistor and are used in a variety of digital integrated circuits. In this type of transistor, the gate is insulated from the source and drain, meaning that no current flows between the two. A small voltage applied to the gate creates a high resistance layer between the two, and hence no direct current flow takes place. This allows the transistor to be used in different ways and become a useful device for switching and amplifying signals.
The low threshold voltage of the TPC8132LQ makes it ideal for low power applications. The transistor has a threshold voltage of 0.75V, meaning it can be triggered easily with a low voltage and so can be used in applications which require low power consumption. The low threshold voltage also means that the device can be used in high speed operations, where quick turn-on and off times are required.
The TPC8132LQ is also a popular device for power amplifiers, where it can be used to amplify signals through its high gain characteristics. It can also be used in a variety of RF applications, such as RF amplifiers, oscillators and modulators, as the low threshold voltage allows for better power efficiency. Additionally, the transistor is also used in Controlling DC motor speed, switching circuits and inverters.
Overall, the TPC8132LQ is a small signal dual N-channel MOSFET with a low threshold voltage. It is used in a variety of applications, from low power applications to amplifying signals and RF operations. Its low threshold voltage makes it ideal for high-speed operations, as it can be triggered quickly with a low voltage and hence makes it an attractive choice for a number of different applications.
The specific data is subject to PDF, and the above content is for reference
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