| Allicdata Part #: | TPC8109CT-ND |
| Manufacturer Part#: |
TPC8109(TE12L) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET P-CH 30V 10A 8-SOP |
| More Detail: | P-Channel 30V 10A (Ta) 1W (Ta) Surface Mount 8-SOP... |
| DataSheet: | TPC8109(TE12L) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
| Supplier Device Package: | 8-SOP (5.5x6.0) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2260pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Cut Tape (CT) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
TPC8109(TE12L) Application Field and Working Principle
The TPC8109(TE12L) is a single Gates FET developed by Toshiba Corporation. It’s a field effect transistor that can be used in electronic circuits, switches, amplifiers and other applications. It’s also known as a MOSFET or MOS-type field-effect transistor because of the metal-oxide-semiconductor structure of its gate electrodes.The TPC8109(TE12L) is a single Gates FET designed primarily for switching applications. It provides low on-state resistance, high current drive and fast switching times. It offers the user a wide range of voltage, current and temperature ratings, from -55° C to +125° C.The TPC8109(TE12L) is available in a variety of packages, making it suitable for a wide range of applications. It can be used in high power digital applications, such as synchronous rectification, power switching, motor speed control, audio signal switching, and in high accuracy analog applications, such as current sensing.The main components of the TPC8109(TE12L) are a source, a drain and a gate. The source and the drain are connected to an electrical current, and the gate carries a voltage that controls how much current passes through. It is an ‘enhancement’ type FET, which means that when the voltage on the gate is more than a certain threshold, the current flow increases significantly.When the TPC8109(TE12L) is working properly, the gate can be used to control the current flow between the source and the drain. It can be used to switch on and off the current, or to modulate it, depending on the applied voltage. It can also be used to reduce distortion and noise in an audio signal, as it requires less voltage to switch the gate on or off than a typical bipolar transistor.The TPC8109(TE12L) is a versatile device that can be used in a wide range of electronic circuits, switches, amplifiers, and other applications. Its low on-state resistance, high current drive, and fast switching times make it an attractive alternative to traditional transistors, and its wide voltage and temperature ratings make it suitable for a range of operating environments.The TPC8109(TE12L) can be used to help reduce the board space and power requirements of a device. Its versatile structure makes it suitable for a variety of applications, and its high current drive, and fast switching times make it a popular choice for high-power digital applications.The TPC8109 (TE12L) can help users maximise their system performance by providing efficient power switching and modulation. With its wide voltage and temperature ratings and versatile structure, it is ideal for a variety of applications, from high-power digital circuits to low-noise, high-accuracy analog circuits.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TPC817B C9G | Taiwan Semic... | -- | 25679 | OPTOISO 5KV TRANS 4DIPOpt... |
| TPC816S1C RAG | Taiwan Semic... | 0.06 $ | 2000 | OPTOISO 5KV TRANS 4SOPOpt... |
| TPC817A C9G | Taiwan Semic... | 0.33 $ | 23223 | OPTOISO 5KV TRANS 4DIPOpt... |
| TPC817S1A RAG | Taiwan Semic... | 0.06 $ | 4000 | OPTOISO 5KV TRANS 4SOPOpt... |
| TPC8134,LQ(S | Toshiba Semi... | 0.22 $ | 1000 | MOSFET P-CH 40V 5A 8SOPP-... |
| TPC8111(TE12L,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 30V 11A SOP8 ... |
| TPC817S1B RAG | Taiwan Semic... | -- | 6000 | OPTOISO 5KV TRANS 4SOPOpt... |
| TPC8.2AHM3/86A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 7.02V 12.1V TO2... |
| TPC817MC C9G | Taiwan Semic... | 0.35 $ | 29021 | OPTOISO 5KV TRANS DIP-4MO... |
| TPC8036-H(TE12L,QM | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 18A 8-SOI... |
| TPC8132,LQ(S | Toshiba Semi... | 0.29 $ | 1000 | MOSFET P-CH 40V 7A 8SOPP-... |
| TPC8031-H(TE12LQM) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 11A SOP8 ... |
| TPC816C C9G | Taiwan Semic... | 0.04 $ | 1000 | OPTOISO 5KV TRANS 4DIPOpt... |
| TPC8021-H(TE12LQ,M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 11A SOP8 ... |
| TPC816A C9G | Taiwan Semic... | 0.33 $ | 2459 | OPTOISO 5KV TRANS 4DIPOpt... |
| TPC8407,LQ(S | Toshiba Semi... | 0.39 $ | 1000 | MOSFET N/P-CH 30V 9A/7.4A... |
| TPC8018-H(TE12LQM) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 18A SOP8 ... |
| TPC8048-H(TE12L,Q) | Toshiba Semi... | 1.6 $ | 1955 | MOSFET N-CH 60V 16A 8-SOP... |
| TPC8109(TE12L) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 30V 10A 8-SOP... |
| TPC8.2HM3/87A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 6.63V 12.5V TO2... |
| TPC8033-H(TE12LQM) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 17A SOP8 ... |
| TPC816B C9G | Taiwan Semic... | 0.33 $ | 2449 | OPTOISO 5KV TRANS 4DIPOpt... |
| TPC8212-H(TE12LQ,M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 6A SOP8M... |
| TPC8408,LQ(S | Toshiba Semi... | 0.46 $ | 1000 | MOSFET N/P-CH 40V 6.1A/5.... |
| TPC8208(TE12L,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 5A 8-SOP... |
| TPC8092,LQ(S | Toshiba Semi... | 0.26 $ | 996 | MOSFET N-CH 30V 15A 8SOPN... |
| TPC8115(TE12L,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 20V 10A SOP8 ... |
| TPC816D C9G | Taiwan Semic... | 0.33 $ | 2436 | OPTOISO 5KV TRANS 4DIPOpt... |
| TPC8.2AHM3_A/I | Vishay Semic... | 0.29 $ | 1000 | TVS DIODE 7.02V 12.1V TO2... |
| TPC816S1B RAG | Taiwan Semic... | 0.06 $ | 2000 | OPTOISO 5KV TRANS 4SOPOpt... |
| TPC8133,LQ(S | Toshiba Semi... | 0.41 $ | 1000 | MOSFET P-CH 40V 9A 8SOPP-... |
| TPC8038-H(TE12L,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 12A SOP8 ... |
| TPC8125,LQ(S | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 30V 10A 8SOPP... |
| TPC8032-H(TE12LQM) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 15A SOP8 ... |
| TPC8126,LQ(CM | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 30V 11A 8SOPP... |
| TPC8113(TE12L,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 30V 11A SOP8 ... |
| TPC8207(TE12L) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 6A 8-SOP... |
| TPC8110(TE12L,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 40V 8A SOP8 2... |
| TPC8211(TE12L,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 5.5A SOP... |
| TPC8026(TE12L,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 13A 8-SOI... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
TPC8109(TE12L) Datasheet/PDF