TPC8109(TE12L) Allicdata Electronics
Allicdata Part #:

TPC8109CT-ND

Manufacturer Part#:

TPC8109(TE12L)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET P-CH 30V 10A 8-SOP
More Detail: P-Channel 30V 10A (Ta) 1W (Ta) Surface Mount 8-SOP...
DataSheet: TPC8109(TE12L) datasheetTPC8109(TE12L) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Discontinued at Digi-Key
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 10V
FET Feature: --
Power Dissipation (Max): 1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP (5.5x6.0)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Description

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TPC8109(TE12L) Application Field and Working Principle

The TPC8109(TE12L) is a single Gates FET developed by Toshiba Corporation. It’s a field effect transistor that can be used in electronic circuits, switches, amplifiers and other applications. It’s also known as a MOSFET or MOS-type field-effect transistor because of the metal-oxide-semiconductor structure of its gate electrodes.The TPC8109(TE12L) is a single Gates FET designed primarily for switching applications. It provides low on-state resistance, high current drive and fast switching times. It offers the user a wide range of voltage, current and temperature ratings, from -55° C to +125° C.The TPC8109(TE12L) is available in a variety of packages, making it suitable for a wide range of applications. It can be used in high power digital applications, such as synchronous rectification, power switching, motor speed control, audio signal switching, and in high accuracy analog applications, such as current sensing.The main components of the TPC8109(TE12L) are a source, a drain and a gate. The source and the drain are connected to an electrical current, and the gate carries a voltage that controls how much current passes through. It is an ‘enhancement’ type FET, which means that when the voltage on the gate is more than a certain threshold, the current flow increases significantly.When the TPC8109(TE12L) is working properly, the gate can be used to control the current flow between the source and the drain. It can be used to switch on and off the current, or to modulate it, depending on the applied voltage. It can also be used to reduce distortion and noise in an audio signal, as it requires less voltage to switch the gate on or off than a typical bipolar transistor.The TPC8109(TE12L) is a versatile device that can be used in a wide range of electronic circuits, switches, amplifiers, and other applications. Its low on-state resistance, high current drive, and fast switching times make it an attractive alternative to traditional transistors, and its wide voltage and temperature ratings make it suitable for a range of operating environments.The TPC8109(TE12L) can be used to help reduce the board space and power requirements of a device. Its versatile structure makes it suitable for a variety of applications, and its high current drive, and fast switching times make it a popular choice for high-power digital applications.The TPC8109 (TE12L) can help users maximise their system performance by providing efficient power switching and modulation. With its wide voltage and temperature ratings and versatile structure, it is ideal for a variety of applications, from high-power digital circuits to low-noise, high-accuracy analog circuits.

The specific data is subject to PDF, and the above content is for reference

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