Allicdata Part #: | TPC8038-H(TE12L,Q)-ND |
Manufacturer Part#: |
TPC8038-H(TE12L,Q) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 12A SOP8 2-6J1B |
More Detail: | N-Channel 30V 12A (Ta) Surface Mount 8-SOP (5.5x6... |
DataSheet: | TPC8038-H(TE12L,Q) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package: | 8-SOP (5.5x6.0) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | U-MOSV-H |
Rds On (Max) @ Id, Vgs: | 11.4 mOhm @ 6A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The TPC8038-H(TE12L,Q) is one of the most popular transistors, particularly the Field Effect Transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs).
In electronic circuits, FETs and MOSFETs are used as amplifiers, switches, and voltage level shifters, and are part of many modern integrated circuit designs. The TPC8038-H(TE12L,Q) is a single FET or MOSFET, with an integrated drain, source and gate. It has a high current capacity and low on-state resistance. The device is designed to provide an efficient power delivery between source and drain terminals, and to ensure smooth, reliable current flow.
The TPC8038-H(TE12L,Q) is suitable for a wide range of applications, including power supply and load switching, DC-DC converter, high-speed power applications, RF power amplifier, and linear amplifier designs. In most cases, this FET or MOSFET will be used to control and manage the current flow between two points of a circuit. It can also be used for general switching and threshold switching, enabling it to be used to control the flow of electricity in electronic systems. In addition, this transistor can be used in high efficiency data switching applications.
The working principle of the TPC8038-H(TE12L,Q) is based on the fact that its gate is insulated from the rest of the circuit, allowing the gate to be used to control the flow of current. The gate is electrically separate from the rest of the circuit, and is basically a gate electrode which can be charged or discharged to control the current flowing between the source and the drain. Depending on whether the gate is charged or discharged, the drain-to-source current will be either fully on or fully off. Charging the gate will cause the channel inside the transistor to remain conducting and the current will flow between the source and the drain.
In addition, the TPC8038-H(TE12L,Q) also contains other features that can be programmed in order to improve transistor performance. It can be programmed for specific current levels and for higher speed performance, and also has a low threshold voltage. This feature is used to reduce the power dissipation and improve system efficiency.
Overall, the TPC8038-H(TE12L,Q) is a versatile FET or MOSFET that can be used in a wide range of applications. Its high current capacity and low on-state resistance make it an ideal choice for many different power management applications, while its integrated drain, source, and gate provide efficient power delivery between source and drain terminals. The incorporated features of the TPC8038-H(TE12L,Q) also make it an ideal choice for high efficiency switching, DC-DC converter and power amplifier applications.
The specific data is subject to PDF, and the above content is for reference
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