| Allicdata Part #: | TPC8038-H(TE12L,Q)-ND |
| Manufacturer Part#: |
TPC8038-H(TE12L,Q) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 30V 12A SOP8 2-6J1B |
| More Detail: | N-Channel 30V 12A (Ta) Surface Mount 8-SOP (5.5x6... |
| DataSheet: | TPC8038-H(TE12L,Q) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
| Supplier Device Package: | 8-SOP (5.5x6.0) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | -- |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
| Series: | U-MOSV-H |
| Rds On (Max) @ Id, Vgs: | 11.4 mOhm @ 6A, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The TPC8038-H(TE12L,Q) is one of the most popular transistors, particularly the Field Effect Transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs).
In electronic circuits, FETs and MOSFETs are used as amplifiers, switches, and voltage level shifters, and are part of many modern integrated circuit designs. The TPC8038-H(TE12L,Q) is a single FET or MOSFET, with an integrated drain, source and gate. It has a high current capacity and low on-state resistance. The device is designed to provide an efficient power delivery between source and drain terminals, and to ensure smooth, reliable current flow.
The TPC8038-H(TE12L,Q) is suitable for a wide range of applications, including power supply and load switching, DC-DC converter, high-speed power applications, RF power amplifier, and linear amplifier designs. In most cases, this FET or MOSFET will be used to control and manage the current flow between two points of a circuit. It can also be used for general switching and threshold switching, enabling it to be used to control the flow of electricity in electronic systems. In addition, this transistor can be used in high efficiency data switching applications.
The working principle of the TPC8038-H(TE12L,Q) is based on the fact that its gate is insulated from the rest of the circuit, allowing the gate to be used to control the flow of current. The gate is electrically separate from the rest of the circuit, and is basically a gate electrode which can be charged or discharged to control the current flowing between the source and the drain. Depending on whether the gate is charged or discharged, the drain-to-source current will be either fully on or fully off. Charging the gate will cause the channel inside the transistor to remain conducting and the current will flow between the source and the drain.
In addition, the TPC8038-H(TE12L,Q) also contains other features that can be programmed in order to improve transistor performance. It can be programmed for specific current levels and for higher speed performance, and also has a low threshold voltage. This feature is used to reduce the power dissipation and improve system efficiency.
Overall, the TPC8038-H(TE12L,Q) is a versatile FET or MOSFET that can be used in a wide range of applications. Its high current capacity and low on-state resistance make it an ideal choice for many different power management applications, while its integrated drain, source, and gate provide efficient power delivery between source and drain terminals. The incorporated features of the TPC8038-H(TE12L,Q) also make it an ideal choice for high efficiency switching, DC-DC converter and power amplifier applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TPC817B C9G | Taiwan Semic... | -- | 25679 | OPTOISO 5KV TRANS 4DIPOpt... |
| TPC816S1C RAG | Taiwan Semic... | 0.06 $ | 2000 | OPTOISO 5KV TRANS 4SOPOpt... |
| TPC817A C9G | Taiwan Semic... | 0.33 $ | 23223 | OPTOISO 5KV TRANS 4DIPOpt... |
| TPC817S1A RAG | Taiwan Semic... | 0.06 $ | 4000 | OPTOISO 5KV TRANS 4SOPOpt... |
| TPC8134,LQ(S | Toshiba Semi... | 0.22 $ | 1000 | MOSFET P-CH 40V 5A 8SOPP-... |
| TPC8111(TE12L,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 30V 11A SOP8 ... |
| TPC817S1B RAG | Taiwan Semic... | -- | 6000 | OPTOISO 5KV TRANS 4SOPOpt... |
| TPC8.2AHM3/86A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 7.02V 12.1V TO2... |
| TPC817MC C9G | Taiwan Semic... | 0.35 $ | 29021 | OPTOISO 5KV TRANS DIP-4MO... |
| TPC8036-H(TE12L,QM | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 18A 8-SOI... |
| TPC8132,LQ(S | Toshiba Semi... | 0.29 $ | 1000 | MOSFET P-CH 40V 7A 8SOPP-... |
| TPC8031-H(TE12LQM) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 11A SOP8 ... |
| TPC816C C9G | Taiwan Semic... | 0.04 $ | 1000 | OPTOISO 5KV TRANS 4DIPOpt... |
| TPC8021-H(TE12LQ,M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 11A SOP8 ... |
| TPC816A C9G | Taiwan Semic... | 0.33 $ | 2459 | OPTOISO 5KV TRANS 4DIPOpt... |
| TPC8407,LQ(S | Toshiba Semi... | 0.39 $ | 1000 | MOSFET N/P-CH 30V 9A/7.4A... |
| TPC8018-H(TE12LQM) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 18A SOP8 ... |
| TPC8048-H(TE12L,Q) | Toshiba Semi... | 1.6 $ | 1955 | MOSFET N-CH 60V 16A 8-SOP... |
| TPC8109(TE12L) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 30V 10A 8-SOP... |
| TPC8.2HM3/87A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 6.63V 12.5V TO2... |
| TPC8033-H(TE12LQM) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 17A SOP8 ... |
| TPC816B C9G | Taiwan Semic... | 0.33 $ | 2449 | OPTOISO 5KV TRANS 4DIPOpt... |
| TPC8212-H(TE12LQ,M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 6A SOP8M... |
| TPC8408,LQ(S | Toshiba Semi... | 0.46 $ | 1000 | MOSFET N/P-CH 40V 6.1A/5.... |
| TPC8208(TE12L,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 5A 8-SOP... |
| TPC8092,LQ(S | Toshiba Semi... | 0.26 $ | 996 | MOSFET N-CH 30V 15A 8SOPN... |
| TPC8115(TE12L,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 20V 10A SOP8 ... |
| TPC816D C9G | Taiwan Semic... | 0.33 $ | 2436 | OPTOISO 5KV TRANS 4DIPOpt... |
| TPC8.2AHM3_A/I | Vishay Semic... | 0.29 $ | 1000 | TVS DIODE 7.02V 12.1V TO2... |
| TPC816S1B RAG | Taiwan Semic... | 0.06 $ | 2000 | OPTOISO 5KV TRANS 4SOPOpt... |
| TPC8133,LQ(S | Toshiba Semi... | 0.41 $ | 1000 | MOSFET P-CH 40V 9A 8SOPP-... |
| TPC8038-H(TE12L,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 12A SOP8 ... |
| TPC8125,LQ(S | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 30V 10A 8SOPP... |
| TPC8032-H(TE12LQM) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 15A SOP8 ... |
| TPC8126,LQ(CM | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 30V 11A 8SOPP... |
| TPC8113(TE12L,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 30V 11A SOP8 ... |
| TPC8207(TE12L) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 6A 8-SOP... |
| TPC8110(TE12L,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 40V 8A SOP8 2... |
| TPC8211(TE12L,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 5.5A SOP... |
| TPC8026(TE12L,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 13A 8-SOI... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
TPC8038-H(TE12L,Q) Datasheet/PDF