| Allicdata Part #: | TPC8208(TE12L,Q,M)-ND |
| Manufacturer Part#: |
TPC8208(TE12L,Q,M) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET 2N-CH 20V 5A SOP8 |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 5A 450mW Surfa... |
| DataSheet: | TPC8208(TE12L,Q,M) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 1.2V @ 200µA |
| Base Part Number: | TPC*208 |
| Supplier Device Package: | 8-SOP (5.5x6.0) |
| Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power - Max: | 450mW |
| Input Capacitance (Ciss) (Max) @ Vds: | 780pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.5nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 50 mOhm @ 2.5A, 4V |
| Current - Continuous Drain (Id) @ 25°C: | 5A |
| Drain to Source Voltage (Vdss): | 20V |
| FET Feature: | Logic Level Gate |
| FET Type: | 2 N-Channel (Dual) |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The TPC8208(TE12L,Q,M) family of transistors is a series of field-effect transistors (FETs) used in a variety of applications. This family of transistors is composed of array of FETs which are specially designed to increase switching speed and provide low electrical noise in various applications. Due to their unique design, they offer much greater speed and performance than other similar components.
The TPC8208 can be used in applications such as switching and amplification, in high speed digital circuits, and in motor and motor speed control circuits. In addition, they are suitable for use in audio and video signal processing, in wireless communication, and in general purpose switching solutions.FETs offer a low input impedance, which is essential for applications such as audio processing, as FETs are able to provide a much higher degree of signal isolation than other components.
The working principle of the TPC8208 is based upon the platform of field effect transistors (FETs). FETs are semiconductor devices that have three terminals, consisting of a drain (D), gate (G) and source (S). These components operate based on the principle of electric field-effect and can be used as switches, amplifiers or simple rectifiers in circuits.
When a voltage is applied to the gate of a FET, it forms an electric field which causes electrons to be deposited onto the FET channel. This in turn reduces the resistance of the channel, thereby allowing current to flow through it. By controlling the voltage applied to the gate, it is possible to control the amount of current that flows through the device.
The TPC8208 enables designers to increase the switching speed of their FET devices as well as reduce the amount of electrical noise generated in the circuit. This is achieved by using an array of multiple FETs to improve the switching speed. In addition, the unique design of the TPC8208 minimizes the amount of electrical noise generated in the circuit, making it suitable for use in high-speed digital circuits.
The TPC8208 family of transistors is a popular choice for designers due to its fast switching speed, low electrical noise, and excellent performance. This series of FETs offers much better speed and performance than other similar components and is suitable for use in a variety of applications, including switching and amplifying, high-speed digital circuits and motor speed control.
The specific data is subject to PDF, and the above content is for reference
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TPC8208(TE12L,Q,M) Datasheet/PDF