TPC8213-H(TE12LQ,M

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The TPC8213-H is part of the family of FETs, MOSFETs Arrays offered by Texas Instruments. This part is a three-terminal, HEXFET power MOSFET array housed in a 12-pin, low-profile, narrow-body SOIC package. The device is specifically designed for devices where multi-channel power control, switching, and current sensing over a wide loading line range is essential.

The TPC8213-H(TE12LQ,M) is specialized for applications in which high efficiency and improved overall system performance are essential. It allows the designer to monitor the power delivery while providing power control and switching of the circuit. The part is well-suited for high-power HVAC, medical, and military applications. This device also can be used in audio, automotive, and computing applications.

The TPC8213-H(TE12LQ,M) implements a three-terminal P-Channel field effect transistor (FET) in a very small package. This unique construction creates a power MOSFET array capable of transporting multiple currents between input and output connections. This part has excellent switching performance, with a low gate-to-source resistance of only 1.5Ω and a high gate capacitance.

The operating principle of the TPC8213-H is simple. When a voltage is supplied to the gate terminal, it creates a "capture" or field effect between the gate and the source. This allows a current to be transferred from the source to the drain. Once the gate voltage is removed, the current stops flowing and is cut off from the drain.

The TPC8213-H is an advanced power MOSFET that offers reliable and efficient performance in multiple applications. Its power control, protection, and current sensing capabilities make it ideal for applications in automotive and medical fields. The device also demonstrates improved switching performance with a low gate resistance while providing a highly efficient power delivery.

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