TPC8129,LQ(S Allicdata Electronics
Allicdata Part #:

TPC8129LQ(S-ND

Manufacturer Part#:

TPC8129,LQ(S

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET P-CH 30V 9A 8SOP
More Detail: P-Channel 30V 9A (Ta) 1W (Ta) Surface Mount 8-SOP
DataSheet: TPC8129,LQ(S datasheetTPC8129,LQ(S Datasheet/PDF
Quantity: 1000
2500 +: $ 0.22303
Stock 1000Can Ship Immediately
$ 0.25
Specifications
Vgs(th) (Max) @ Id: 2V @ 200µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V
Vgs (Max): +20V, -25V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: U-MOSVI
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TPC8129,LQ transistor, or Field Effect Transistor (FET) is a single, small-sized, relatively low-powered switch that can be used in various applications in modern electronics. It has a variety of features, including low power consumption, good operational characteristics and electrical insulation properties.

The TPC8129,LQ is a N-channel FET, meaning it consists of a semiconductor channel between two terminals, called the source and the drain. The third terminal, called the gate, controls the voltage that the FET must pass before the channel will be opened, enabling the current to flow through it. Since the gate electrode is insulated from the channel, this type of FET is known as an insulated-gate FET, or IGFET.

The TPC8129,LQ has a Gate-Source Breakdown Voltage of -4.5V ±10%, which means it will start to conduct current when the voltage at its gate approaches this level. As the voltage across the gate-source terminals increases, the channel\'s current-carrying capacity also increases — this is important for driving circuits affected by an increasing load. This FET is also very reliable and environmentally friendly, able to withstand up to +100℃ of temperature, and emitting no dangerous gases or smoke.

The TPC8129,LQ can be used for a variety of applications, including line-level audio, voltage-clamping and current-regulating applications and switching applications such as motor speed control, power switching, and AC-DC power supplies. It can even be used as part of a power management system that switches on and off various loads based on demand. Some of the most common applications include level-shifting and isolation circuits, motor control, and high-frequency switching.

The TPC8129,LQ is well-suited to a wide range of applications thanks to its low on-resistance and its good thermal characteristics. Its low on-resistance allows low-voltage operation, meaning it can operate from a single battery. It also has a capacitance between the gate and source of only 25pF, which makes it suitable for a wide range of high-frequency applications.

The TPC8129,LQ transistors can also be used in any kind of circuit to provide basic switching functionality. For example, it can be used in logic gates, relays, and other types of circuit diagrams. This makes it perfect for any project from basic electronics to higher-level application-specific tasks. In addition, it has a wide variety of package options available, making it an ideal choice for any design application.

The specific data is subject to PDF, and the above content is for reference

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