| Allicdata Part #: | TPC8129LQ(S-ND |
| Manufacturer Part#: |
TPC8129,LQ(S |
| Price: | $ 0.25 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET P-CH 30V 9A 8SOP |
| More Detail: | P-Channel 30V 9A (Ta) 1W (Ta) Surface Mount 8-SOP |
| DataSheet: | TPC8129,LQ(S Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.22303 |
| Vgs(th) (Max) @ Id: | 2V @ 200µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1650pF @ 10V |
| Vgs (Max): | +20V, -25V |
| Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
| Series: | U-MOSVI |
| Rds On (Max) @ Id, Vgs: | 22 mOhm @ 4.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The TPC8129,LQ transistor, or Field Effect Transistor (FET) is a single, small-sized, relatively low-powered switch that can be used in various applications in modern electronics. It has a variety of features, including low power consumption, good operational characteristics and electrical insulation properties.
The TPC8129,LQ is a N-channel FET, meaning it consists of a semiconductor channel between two terminals, called the source and the drain. The third terminal, called the gate, controls the voltage that the FET must pass before the channel will be opened, enabling the current to flow through it. Since the gate electrode is insulated from the channel, this type of FET is known as an insulated-gate FET, or IGFET.
The TPC8129,LQ has a Gate-Source Breakdown Voltage of -4.5V ±10%, which means it will start to conduct current when the voltage at its gate approaches this level. As the voltage across the gate-source terminals increases, the channel\'s current-carrying capacity also increases — this is important for driving circuits affected by an increasing load. This FET is also very reliable and environmentally friendly, able to withstand up to +100℃ of temperature, and emitting no dangerous gases or smoke.
The TPC8129,LQ can be used for a variety of applications, including line-level audio, voltage-clamping and current-regulating applications and switching applications such as motor speed control, power switching, and AC-DC power supplies. It can even be used as part of a power management system that switches on and off various loads based on demand. Some of the most common applications include level-shifting and isolation circuits, motor control, and high-frequency switching.
The TPC8129,LQ is well-suited to a wide range of applications thanks to its low on-resistance and its good thermal characteristics. Its low on-resistance allows low-voltage operation, meaning it can operate from a single battery. It also has a capacitance between the gate and source of only 25pF, which makes it suitable for a wide range of high-frequency applications.
The TPC8129,LQ transistors can also be used in any kind of circuit to provide basic switching functionality. For example, it can be used in logic gates, relays, and other types of circuit diagrams. This makes it perfect for any project from basic electronics to higher-level application-specific tasks. In addition, it has a wide variety of package options available, making it an ideal choice for any design application.
The specific data is subject to PDF, and the above content is for reference
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| TPC816B C9G | Taiwan Semic... | 0.33 $ | 2449 | OPTOISO 5KV TRANS 4DIPOpt... |
| TPC817A C9G | Taiwan Semic... | 0.33 $ | 23223 | OPTOISO 5KV TRANS 4DIPOpt... |
| TPC8109(TE12L) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 30V 10A 8-SOP... |
| TPC8031-H(TE12LQM) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 11A SOP8 ... |
| TPC816A C9G | Taiwan Semic... | 0.33 $ | 2459 | OPTOISO 5KV TRANS 4DIPOpt... |
| TPC8111(TE12L,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 30V 11A SOP8 ... |
| TPC817S1B RAG | Taiwan Semic... | -- | 6000 | OPTOISO 5KV TRANS 4SOPOpt... |
| TPC8092,LQ(S | Toshiba Semi... | 0.26 $ | 996 | MOSFET N-CH 30V 15A 8SOPN... |
| TPC8115(TE12L,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 20V 10A SOP8 ... |
| TPC816D C9G | Taiwan Semic... | 0.33 $ | 2436 | OPTOISO 5KV TRANS 4DIPOpt... |
| TPC8407,LQ(S | Toshiba Semi... | 0.39 $ | 1000 | MOSFET N/P-CH 30V 9A/7.4A... |
| TPC8126,LQ(CM | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 30V 11A 8SOPP... |
| TPC8212-H(TE12LQ,M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 6A SOP8M... |
| TPC816MD C9G | Taiwan Semic... | 0.04 $ | 1000 | OPTOISO 5KV TRANS DIP-4MO... |
| TPC8051-H(TE12L,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 80V 13A 8-SOP... |
| TPC8035-H(TE12L,QM | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 18A SOP8 ... |
| TPC816S1A RAG | Taiwan Semic... | -- | 2000 | OPTOISO 5KV TRANS 4SOPOpt... |
| TPC8129,LQ(S | Toshiba Semi... | 0.25 $ | 1000 | MOSFET P-CH 30V 9A 8SOPP-... |
| TPC8221-H,LQ(S | Toshiba Semi... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 6A 8SOPM... |
| TPC816MC C9G | Taiwan Semic... | 0.04 $ | 1000 | OPTOISO 5KV TRANS DIP-4MO... |
| TPC8.2AHM3_A/H | Vishay Semic... | 0.34 $ | 1000 | TVS DIODE 7.02V 12.1V TO2... |
| TPC817S1C RAG | Taiwan Semic... | 0.06 $ | 14000 | OPTOISO 5KV TRANS 4SOPOpt... |
| TPC817C C9G | Taiwan Semic... | 0.33 $ | 25545 | OPTOISO 5KV TRANS 4DIPOpt... |
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TPC8129,LQ(S Datasheet/PDF