TPC8051-H(TE12L,Q) Allicdata Electronics

TPC8051-H(TE12L,Q) Discrete Semiconductor Products

Allicdata Part #:

TPC8051-HTE12LQCT-ND

Manufacturer Part#:

TPC8051-H(TE12L,Q)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 80V 13A 8-SOP
More Detail: N-Channel 80V 13A (Ta) 1W (Ta) Surface Mount 8-SOP...
DataSheet: TPC8051-H(TE12L,Q) datasheetTPC8051-H(TE12L,Q) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP (5.5x6.0)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7540pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Series: U-MOSVI-H
Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT) 
Description

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The TPC8051-H(TE12L,Q) is a single-gate Field-Effect Transistor (FET), also known more commonly as a MOSFET. It is an electronic semiconductor device which is used to switch electrical current and voltage in electronic circuits. The FET is more particularly categorized as a type of transistor which can either absorb or transmit electrical signals depending on the input and output voltages. The TPC8051-H is a part of a range of devices from the same family that have different sizes, breakdown voltages, current ratings and power dissipation ratings depending on the particular model. This range also includes dual-gate devices.The TPC8051-H is used primarily in high-frequency switching applications. It offers low on-resistance, low withstanding voltage and high switch speed compared to the other devices from the same family. This makes it ideal for applications such as switched-mode power supplies, servo motors and actuators, power amplifiers and digital signal processing. The device also offers a low input capacitance which is advantageous in high speed applications. In addition, because the FET is of a single-gate type, it also means that the voltage applied to the input of the device is directly related to the output voltage, bringing the benefit of simpler control circuit designs.The principle behind FETs such as the TPC8051-H is based on a two-dimensional field of silicon surrounded by two metallic contacts, known as source and drain. The voltage applied on the gate controls the current that flows between the source and the drain and hence the device is known as a voltage-controlled switch. This is unlike the traditional transistor which operates using a current-controlled principle. The MOSFET has no physical connection between the gate and the channel. Instead, the action of an electrical field created by the voltage applied to the gate controls the number of electrons that can pass through the channel.The construction of the TPC8051-H consists of a MOSFET die with a Centre-Gate Connector and three S-lugs connecting the source and drain of the device. The Centre-Gate Connector is made from gold plated copper and the three S-lugs are formed from tin-plated copper. Together, these parts are encapsulated with a moulded epoxy case which provides protection against corrosion, vibration and shock. The device also features an on-chip temperature sensor which is useful in applications that require error-checking as well as a built-in protection system which helps to further safeguard against electrical shorts.In conclusion, the TPC8051-H is an FET in the single-gate family which is commonly used in high-frequency switching applications due to its low on-resistance, low withstanding voltage, high switch speed and low input capacitance. It features a Centre-Gate Connector, three S-lugs and a moulded epoxy case for protection and an on-chip temperature sensor and built-in protection system for error-checking and safeguarding. The device operates with a voltage-controlled principle and is highly suited for switching-mode power supplies, servo motors and actuators, amplifiers and digital signal processors.

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