| Allicdata Part #: | TSM10N06CPROGTR-ND |
| Manufacturer Part#: |
TSM10N06CP ROG |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | MOSFET N-CHANNEL 60V 10A TO252 |
| More Detail: | N-Channel 60V 10A (Ta) 45W (Tc) Surface Mount TO-2... |
| DataSheet: | TSM10N06CP ROG Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252, (D-Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 45W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 65 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The TSM10N06CP ROG is a type of n-channel power MOSFET that is used in a variety of applications such as audio amplifiers and voltage regulators. The ROG stands for Ridged Optimized Gate, which is an advanced transistor structure that was developed specifically to enhance high frequency switching capabilities and lower the on-state resistance. This makes the TSM10N06CP ROG an ideal choice for applications that require higher output current levels and faster switching speeds.
The TSM10N06CP ROG is based upon an n-channel MOSFET, which is a type of transistor that is composed of an insulated gate and an insulated drain. This makes it easier to control the transistor’s current level through the gate, and it also helps to increase the device’s overall efficiency. There are two types of n-channel MOSFETs: enhancement-mode MOSFETs, which can be turned “on” with a positive gate voltage, and depletion-mode MOSFETs, which require a negative gate voltage to turn “off”.
The TSM10N06CP ROG is an enhancement-mode MOSFET, meaning that a positive gate voltage can be used to turn it “on”. The gate voltage can be adjusted as necessary depending on the application, as different levels of gate voltage can result in different levels of current conduction. In addition, the TSM10N06CP ROG has a maximum voltage rating of 8V, meaning that it can be used in applications that require a voltage of up to 8V.
The TSM10N06CP ROG is also designed with an optimized gate ridge that helps to reduce the overall switching losses of the device. This is done by decreasing the device’s on-state resistance and allowing it to conduct more current with less power. The optimized gate also helps to alleviate the problem of voltage and current spikes, which can occur when switching power MOSFETs.
The TSM10N06CP ROG can be used in a variety of applications, including audio amplifiers, voltage regulators, and power supplies. The MOSFET’s ridged optimized gate structure makes it well suited for high frequency switching applications, as it enables the device to switch faster and with more efficiency than traditional transistors. This makes the TSM10N06CP ROG an ideal choice for applications that require higher output current levels, faster switching speeds, and lower on-state resistance.
The specific data is subject to PDF, and the above content is for reference
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TSM10N06CP ROG Datasheet/PDF