TSM15N50CZ C0G Allicdata Electronics
Allicdata Part #:

TSM15N50CZC0G-ND

Manufacturer Part#:

TSM15N50CZ C0G

Price: $ 1.55
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CHANNEL 500V 14A TO220
More Detail: N-Channel 500V 14A (Tc) Through Hole TO-220
DataSheet: TSM15N50CZ C0G datasheetTSM15N50CZ C0G Datasheet/PDF
Quantity: 997
1 +: $ 1.41120
10 +: $ 1.27386
100 +: $ 1.02375
500 +: $ 0.79623
1000 +: $ 0.65973
Stock 997Can Ship Immediately
$ 1.55
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2263pF @ 25V
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

When considering the application field and working principle of the TSM15N50CZ C0G MOSFET, it is important to understand the general characteristics of a MOSFET and how it works. MOSFETs, or Metal-Oxide-Semiconductor Field Effect Transistors, are used in many different types of electronic equipment. MOSFETs generally operate using an input voltage, which is applied across the gate-to-source junction, resulting in the injection of minority carriers, or holes, into the gate region. These holes create an inversion layer at the gate region, allowing a conduction path between the drain and source.

The TSM15N50CZ C0G is a single N-channel enhancement MOSFET, meaning that it has an input voltage that is applied to the gate, which in turn allows a conduction path between the drain and source. In particular, this MOSFET has a drain-source voltage of up to 500 V, a drain current of up to 15 A, and a gate-source voltage of up to 2 V. Furthermore, the RDS(on) of the TSM15N50CZ C0G is 0.09 Ohms, making it suitable for a wide range of applications, such as power switching and motor control.

The TSM15N50CZ C0G can be used in many different types of applications. For example, it can be used as a switch in power supplies and motor control applications, or as a switch in low-voltage switching applications. Additionally, the TSM15N50CZ C0G is well-suited for use in high-power switching circuits, such as for a switching power supply or a motor control circuit. Furthermore, this MOSFET is well-suited for use in low-power switching applications, such as for a logic circuit or for a signal conditioning circuit.

In addition to its many uses in various applications, the TSM15N50CZ C0G is also often used in an array of circuit protection circuits. The TSM15N50CZ C0G can be utilized as a switch in signal protection and overload protection circuits, and its low RDS(on) allows it to be used as an over-current protection device. The TSM15N50CZ C0G can also be used in powering circuits, such as current limiting and soft start circuits. Lastly, this MOSFET can be used in inrush current protection circuits, such as for inrush current limiting.

The TSM15N50CZ C0G is a versatile MOSFET, as it can be used in many different types of applications. Its low RDS(on) allows for efficient use in power switching and motor control circuits. Furthermore, its robustness makes it a suitable choice for use in circuit protection circuits. With its broad application field and its working principle, it is an excellent choice for a wide range of projects.

The specific data is subject to PDF, and the above content is for reference

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