TSM15N50CI C0G

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:	ITO-220
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	--
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2263pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	39nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	440 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	14A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The TSM15N50CI C0G is a commonly used single-gate MOSFET transistor device. While small MOSFET transistors like this one are often used in low-voltage, low-current applications, the TSM15N50CI C0G has a significantly higher capacity than most of its similarly sized competitors. It is a good choice for small projects and low power applications.

Application Field

TSM15N50CI C0G transistors are often used in a wide variety of applications, including:

• Switching and amplifying RF signals
• Acting as pulse-switchable loads in high-voltage circuits
• Serving as voltage regulators in low-power circuits
• Replacing signal diodes in signal conditioning applications

This device is also often used in power management circuits and as an interface switch in phone and telecom applications. The TSM15N50CI C0G also finds use as a protection switch in automotive, computing, and industrial applications. Its low cost and small size make it a versatile option

Working Principle

MOSFET transistors like the TSM15N50CI C0G operate according to the principles of electric fields and charge carriers. The MOSFET consists of three pins, a gate, a source, and a drain. When the gate is charged, it creates a field that attracts electrons from the source to the drain. This is known as the channel conductivity.The amount of current that is able to flow through the channel is determined by the voltage on the gate. If the gate is at the same voltage as the source and drain, it will not create a field and no current will flow. But if the voltage difference between the gate and source and drain is increased, more electrons will flow through the channel and the current will increase accordingly.

Conclusion

The TSM15N50CI C0G is a small, yet powerful, single-gate MOSFET transistor device with a wide range of applications. It is a good choice for projects requiring low-voltage and low-current usage, and is capable of performing tasks typically done with much larger devices. Its small size and low cost also make it a great choice for a wide variety of tasks. The TSM15N50CI C0G works by creating an electric field to attract electrons from one pin (the source) to the other (the drain) when the gate voltage is increased.

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