TSM190N08CZ C0G Allicdata Electronics
Allicdata Part #:

TSM190N08CZC0G-ND

Manufacturer Part#:

TSM190N08CZ C0G

Price: $ 1.98
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CHANNEL 75V 190A TO220
More Detail: N-Channel 75V 190A (Tc) 250W (Tc) Through Hole TO-...
DataSheet: TSM190N08CZ C0G datasheetTSM190N08CZ C0G Datasheet/PDF
Quantity: 900
1 +: $ 1.79550
10 +: $ 1.62288
100 +: $ 1.30410
500 +: $ 1.01430
1000 +: $ 0.84042
Stock 900Can Ship Immediately
$ 1.98
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 30V
FET Feature: --
Power Dissipation (Max): 250W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
Description

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The TSM190N08CZ C0G is a power MOSFET featuring a high-speed, low-on-resistance characteristic and a low gate-source capacitance. It is a single-pole, single-throw (SPST) device with a drain-source on resistance of 0.6 ohms and a drain-source off resistance of 50 ohms. The TSM190N08CZ C0G has a maximum drain-source breakdown voltage of 80 volts and a maximum power dissipation of 1.5 W. It is suitable for use in a wide range of applications such as power switching, amplifier switching, and power drivers for automotive and industrial applications.

Applications

The TSM190N08CZ C0G is primarily used for power switching, amplifier switching, and power driving applications in the automotive and industrial sectors. It is capable of switching signals up to 1000Vp-p and is suitable for use in both DC and AC circuits. In addition, the low on-resistance and gate-source capacitance make the TSM190N08CZ C0G ideal for high frequency, high speed applications. The device is also suitable for many different kinds of switching control, including light dimming, motor control, and temperature control. In motor control applications, the device can be used to drive DC brush and brushless motors, as well as stepper motors.

Working Principle

The TSM190N08CZ C0G is a MOSFET (metal-oxide-semiconductor field-effect transistor). It works by having an electric field-based channel between the source and the drain electrodes. This field is modulated by the gate terminal using a voltage or current. This modulation of the channel permits the movement of charge carriers (electrons) from the source to the drain, which in turn controls the voltage and current flow between the source and drain. This is essentially how the TSM190N08CZ C0G works to control the flow of current in an application.

Conclusion

The TSM190N08CZ C0G is a single-pole, single-throw power MOSFET that is suitable for use in a wide range of applications. Thanks to its low on-resistance and gate-source capacitance, the device can be used in high-frequency, high-speed applications. In addition, it can be used in motor control applications to drive DC brush and brushless motors, as well as stepper motors. In summary, the TSM190N08CZ C0G is an effective solution for power switching, amplifier switching, and power driving applications in the automotive and industrial sectors.

The specific data is subject to PDF, and the above content is for reference

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