TSM3D667M010AH6410D493

Operating Temperature:	-55°C ~ 125°C
Failure Rate:	--
Features:	High Reliability
Ratings:	COTS
Manufacturer Size Code:	3D
Lead Spacing:	--
Height - Seated (Max):	0.377" (9.58mm)
Size / Dimension:	0.315" L x 0.173" W (8.00mm x 4.40mm)
Package / Case:	Stacked SMD, 3 J-Lead
Mounting Type:	Surface Mount
Lifetime @ Temp.:	--
Series:	TSM
ESR (Equivalent Series Resistance):	167 mOhm
Type:	Molded
Voltage - Rated:	10V
Tolerance:	±20%
Capacitance:	660µF
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tray

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Tantalum Capacitors Tantalum capacitors, also known as Ta-CAPs, are a type of electrolytic capacitor that have the disadvantages of large and delicate physical packages but offer excellent performance in terms of high voltage capability, low leakage current, and high frequency response. These capacitors are widely used in applications such as telecommunications, automotive, military, computer, and medical applications and are widely used by a number of electronic component manufacturers. The TSM3D667M010AH6410D493 is one of the most popular Ta-CAPs on the market today. It is a high voltage, low leakage capacitance chip on-board module, which is a type of SMD component. The TSM3D667M010AH6410D493 has an indicative capacitance value of 10μF (microfarad). Its rated voltage is 10 VDC and it can withstand up to 25V. Its rated temperature range is -55 to +85°C and its resistance to temperature fluctuation is ±15%. The TSM3D667M010AH6410D493 is widely used in applications such as telecommunications, lighting, automotive, medical, military and computer systems. Telecommunications applications require low-leakage, high-voltage, and rapid-switching Ta-CAPs to permit circuit protection, the transmission of data and reliable communications; lighting applications need a drive and supply of current sources, low voltage, and high frequency signals; automotive applications are usually characterized by their electrical noise sensitivity and require a high capacitance to voltage ratio; medical applications need capacitor performance that is reliable and reliable capacitor dielectrics compliant with the FDA; military applications require reliable and robust capacitors that have a maximum operating temperature range; and computers generally need high-density packages and long-term reliability. The working principle of the TSM3D667M010AH6410D493 is simple. It is a metal-oxide-semiconductor field-effect transistor (MOSFET) with its gate insulated by an oxide layer. When a voltage is applied across the MOSFET, the electrons and holes flow through the oxide layer resulting in a capacitance. This capacitance is the sum of all the individual capacitances of the MOSFET microscopic transistors; the presence of the oxide insulator layer is needed to maintain this capacitance. The oxide layer further increases the capacitance by enabling charge transfer across the oxide barrier. The capacitance results in a voltage drop across the oxide layer, which is regulated by the gate control voltage in order to keep the voltage constant when a certain load is applied. In conclusion, the TSM3D667M010AH6410D493 is a popular Ta-CAP with exemplary performance characteristics. It is used in applications where high voltage, low-leakage, and high-frequency performance is required, such as in telecommunications, automotive, military, medical, and computer systems. Its working principle is based on the principle of a metal-oxide-semiconductor field-effect transistor, which creates a capacitance by the presence of the oxide layer.

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