TSM35N10CP ROG

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252, (D-Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	83.3W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1598pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	34nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	37 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	32A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The TSM35N10CP ROG is a low power N-channel MOSFET that is often used in circuit design applications. This component has an on resistance of 24 ohms and a breakdown voltage of 10V. It comes in a package of either a TO-220AB or a DO-214AC and is a P channel FET typically used in low to mid power designs. This component is specifically designed with a lower than normal input capacitance and an ability to handle higher transient currents.

Application Fields of TSM35N10CP ROG

The TSM35N10CP ROG is versatile in its uses due to its high power switching capabilities. It is suitable for high current switching applications and is typically used for digital control circuits. Its use extends to many devices such as high-speed switching circuits, low voltage DC drives, motor drivers and power supplies, portable devices such as laptop adaptors, TV satellite devices, battery powered ICs, and many more.

Working Principle of TSM35N10CP ROG

The TSM35N10CP ROG is a metal-oxide-semiconductor field-effect transistor (MOSFET) that works on the principle of Inversion Channel Enhancement. A MOSFET is a device used to amplify or act as a switch between two circuits. It has a three pins - gate (G), source (S), and drain (D). In the MOSFET, the gate is kept at a high voltage while the source is kept at a low voltage. When the gate is at a high voltage, it forms a channel between the source and the drain, allowing current to flow. This current flow results due to the flow of electrons which is controlled by the voltage at the gate. Thus, the current flow is controlled by the gate voltage, as a result of inversion channel enhancement.

Conclusion

The TSM35N10CP ROG is an ideal N-channel MOSFET for digital control applications and high current switching. Its low input capacitance and ability to handle high transient currents makes it a suitable option for devices such as motor drivers and power supplies. It has a maximum on resistance of 24 ohms and a breakdown voltage of 10V, allowing it to handle high loads efficiently. The working principle of a MOSFET is based on Inversion Channel Enhancement which allows current to flow between source and drain based on the gate voltage.

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