Allicdata Part #: | TSM3457CX6RFGTR-ND |
Manufacturer Part#: |
TSM3457CX6 RFG |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET P-CHANNEL 30V 5A SOT26 |
More Detail: | P-Channel 30V 5A (Ta) 2W (Ta) Surface Mount SOT-26 |
DataSheet: | TSM3457CX6 RFG Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.10107 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-26 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 551.57pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A TSM3457CX6 RFG is a type of high-frequency, enhancement-mode, N-channel junction field effect transistor (JFET). It combines superior RF performance, low-noise, and a very low-power consumption in a single package. The device also features a wide frequency range, allowing it to be used across different frequency bands, such as the UHF and VHF bands. Additionally, the TSM3457CX6 RFG can be used in a range of applications, including amplifiers, mixers, filters, and switches.
A transistor is a semiconductor device composed of three terminals; the emitter, base and collector. The way a transistor behaves is determined by the relationship between the voltages applied to its input and output. Transistors can be used as on/off switches or as amplifiers, depending on their properties. In the case of the TSM3457CX6 RFG, it is an enhancement-mode type which does not require a continuous voltage across its base and collector. Instead, it is typically operated at or near ground potential, making it ideal for low-power applications.
The working principle of the TSM3457CX6 RFG is based on the interaction between the electric field and the charge carriers. When a voltage is applied across the base and collector terminals, the electric field in the depletion region creates a surface charge on the oxide-silicon junction. This surface charge modifies the conductance of the transistor, potentially allowing current to flow across its terminals. By controlling the applied voltage and/or current, it is possible to modulate the amount of current flowing across the base and collector.
The TSM3457CX6 RFG can be used in a variety of RF circuits. It can be used as an amplifier in circuits such as low-noise amplifiers (LNAs), power amplifiers (PAs), and line amplifiers. It can also be used as a mixer in radio-frequency (RF) up-converters. Additionally, it can also be used as a filter in transimpedance amplifiers (TIA) or as a switch in antenna signal muxing applications. As such, it is an important component in a wide range of wireless systems.
In conclusion, the TSM3457CX6 RFG is a type of high-frequency, low-noise, and low-power N-channel JFET. Its wide frequency range and superior RF performance make it well-suited for a range of applications, such as amplifiers, mixers, filters, and switches. Through controlling the applied voltage and/or current, it is possible to modulate its conductance and, thus, regulate the amount of current flowing across its terminals.
The specific data is subject to PDF, and the above content is for reference
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