| Allicdata Part #: | TSM3N80CPROGTR-ND |
| Manufacturer Part#: |
TSM3N80CP ROG |
| Price: | $ 0.39 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | MOSFET N-CHANNEL 800V 3A TO252 |
| More Detail: | N-Channel 800V 3A (Tc) 94W (Tc) Surface Mount TO-2... |
| DataSheet: |  TSM3N80CP ROG Datasheet/PDF |
| Quantity: | 2500 |
| 2500 +: | $ 0.34537 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252, (D-Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 94W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 696pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.2 Ohm @ 1.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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TSM3N80CP ROG application field and working principle<p>The TSM3N80CP ROG is a type of enhancement mode power field effect transistor (FET) that operates in an asymmetric configuration in the VDS-VGDS (gate-source voltage) region. It has a typical power rating of 30-40 volts, up to 55 volts, and a peak stress of 5 amps. The device has very low Rds(on) values at a minimum of 6 ohms for dual sided gate drive for low device loss when operating at high frequency.</p><p>The device contains two SYN3 N-channel enhancement mode power field effect transistors (FETs). A single channel is used to control both the gate and body terminals, while the other two channels control only the gate and source terminals. The two sides of the FET are connected in an active or "cross-shaped" configuration. This configuration allows the device to be used in applications that require the ability to switch currents in either direction.</p><p>The TSM3N80CP ROG is designed for use in power systems communications, power electronics, motor control, and servo control. The device is ideal for applications where high switching currents with low gate control voltages are needed. It is also suitable for applications in automotive and energy storage systems.</p><p>The working principle of the TSM3N80CP ROG is the same for all FETs: the current flows from the source to the drain, when the voltage from the gate increases and exceeds the threshold voltage Vth. When the gate voltage reduces, the FETs switch off, and no current flows between the source and the drain.The device has a very fast switching time and a low gate-drain capacitance. The on-state and off-state resistance is very low, so this increases switching efficiency and reduces power loss through the device. The low gate drive current requirements also reduce the device’s stress and ensure a high-reliability operation.The TSM3N80CP ROG is capable of controlling very high currents with a low gate voltage. The device has a low gate-source capacitance and can be driven by logic levels. It has an integrated high-frequency gate driver circuit, and can be operated from a wide range of voltages, from 3 volts to 60 volts.</p><p>The device also has an integrated temperature monitoring circuit which can detect switches, low and high current operation, and over-temperature events. This helps to ensure long-term reliability and protection of the device. The device also has an over-temperature lockout, which will disable the gate drive if the device exceeds its maximum operating temperature, preventing further damage to the device. The device is also designed with a low-power standby mode, allowing it to be powered down without the need for power disconnection.</p><p>The TSM3N80CP ROG is an easy-to-use device, with a simple interface for use with various control circuits. It also has protection against over-voltage and over-current to help protect against possible damage due to excessive current or voltage.</p><p>In conclusion, the TSM3N80CP ROG is an ideal choice for applications that need high current switching with low gate control voltages and fast switching times. The low gate-drain capacitance and low on-state resistance help to reduce power losses and maximize efficiency. The integrated high-frequency gate driver circuit and the integrated temperature monitoring circuit ensure long-term reliability.</p>The specific data is subject to PDF, and the above content is for reference
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