Allicdata Part #: | TSM320N03CXRFGTR-ND |
Manufacturer Part#: |
TSM320N03CX RFG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CHANNEL 30V 5.5A SOT23 |
More Detail: | N-Channel 30V 5.5A (Tc) 1.8W (Tc) Surface Mount SO... |
DataSheet: | TSM320N03CX RFG Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 792pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 8.9nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 32 mOhm @ 4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TSM320N03CX RFG is an enhancement mode enhancement-mode lateral N-channel MOSFET transistor. It is an ultra low-on-resistance MOSFET transistor. Its operation is based on the principle of carrier injection which is enabled by a high electric field. The TSM320N03CX RFG has been designed specifically for applications such as DC/DC converters and switching regulators. It is capable of delivering high speed switching performance and high efficiency with very low gate charge.
The TSM320N03CX RFG is fabricated using an N-channel MOSFET process. The structure is composed of a vertical N-channel MOSFET, a thin-film gate oxide, and a heavily doped substrate. The transistor is designed and optimized for low on-resistance and fast switching speeds, making it ideal for use in high frequency DC/DC converters and switching regulators.
Application Field
The TSM320N03CX RFG can be used in many applications due to its excellent performance characteristics. It is particularly suitable for use in DC/DC converters and switching regulators. These applications require high speed switching, low on-resistance, and low gate charge. The TSM320N03CX RFG is capable of delivering these features in a small form factor. It is also suitable for use in low voltage applications such as battery powered consumer electronics.
Working Principle
The TSM320N03CX RFG is based on the principle of voltage-controlled conduction. It uses a thin-film gate oxide and heavily doped substrate, which enables it to operate at low voltages. The gate oxide is designed to absorb the electric field generated by the gate voltage and impart the voltage to the channel. This triggers the injection of carriers (electrons, holes) into the channel, resulting in the establishment of a conductive channel through which current can flow.
The current in the channel can be controlled by changing the gate voltage. The strength of the electric field generated by the gate voltage determines the magnitude of the current in the channel. This allows for precise control of the current, making it possible to use the device in applications that require both high speed switching and high efficiency.
The TSM320N03CX RFG is a high performance device and is suitable for use in many different applications. It is an ideal choice for DC/DC converters and switching regulators, as well as low voltage applications such as battery powered consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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