Allicdata Part #: | TSM3N90CHC5G-ND |
Manufacturer Part#: |
TSM3N90CH C5G |
Price: | $ 0.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 900V 2.5A TO251 |
More Detail: | N-Channel 900V 2.5A (Tc) 94W (Tc) Through Hole TO-... |
DataSheet: | TSM3N90CH C5G Datasheet/PDF |
Quantity: | 1861 |
1 +: | $ 0.86310 |
10 +: | $ 0.76482 |
100 +: | $ 0.60442 |
500 +: | $ 0.46872 |
1000 +: | $ 0.37004 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251 (IPAK) |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 94W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 748pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5.1 Ohm @ 1.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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MOSFETs (metal-oxide-semiconductor-field-effect transistors) are a type of transistor used in a wide variety of applications. The TSM3N90CH C5G is one such MOSFET with a variety of features and applications.
The TSM3N90CH C5G is a single N-channel enhancement-mode MOSFET made with the Insulated Mosfet technology, or FOMOS. It is designed for low power dissipation and high speed switching. It is rated for 3700 Volts and 4.5 Amps of continuous drain current. It has a low RDS@10V of 0.68 Ohms and a low gate charge of 11.25 pF. This makes it an excellent choice for low power and high frequency applications.
The TSM3N90CH C5G is used in a number of applications, including power switching and ‘smart’ lighting solutions. It can also be found in high efficiency motor drives; these solutions require low power consumption, allowing manufacturers to increase equipment efficiency and performance. Additionally, this MOSFET can be used to create linear voltage regulators and charge controllers in solar applications. Its FOMOS technology makes it ideal for these types of applications, where high switching frequencies and low power consumption are required.
The working principle of the TSM3N90CH C5G is relatively simple. When a certain voltage is applied to the gate, a potential difference is created between the gate and the source. This potential difference is called VGS, or the Gate-to-Source voltage. The voltage between the drain and the source is called VDS, or the Drain-to-Source voltage. This voltage controls the amount of current flowing through the MOSFET.
As the voltage between the drain and source increases, more and more current can pass through the channel of the MOSFET. Eventually, the channel saturation point is reached and the MOSFET acts as a resistor and no more current can flow through it. The voltage between the drain and source is called the drain-source breakdown voltage, which for the TSM3N90CH C5G is 3700 Volts. This is the maximum voltage that the MOSFET can handle before it breaks down.
In summary, the TSM3N90CH C5G is a single N-channel enhancement-mode MOSFET made with FOMOS technology. It is used in a variety of applications including low power and high frequency applications. The MOSFET works by controlling the amount of current that flows through it using the Gate-to-Source and Drain-to-Source voltages. The breakdown voltage of the TSM3N90CH C5G is 3700 Volts.
The specific data is subject to PDF, and the above content is for reference
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