TSM3443CX6 RFG

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The TSM3443CX6 RFG is a state-of-the-art metal-oxide-semiconductor field-effect-transistor (MOSFET) designed and manufactured by Toshiba. It is a metal-oxide-semiconductor-transistor (MOST) that combines a MOS transistor with a bipolar transistor to provide improved power handling, efficiency, and cost savings. The TSM3443CX6 RFG is an ideal solution for a wide range of RF and high speed applications, such as radio frequency (RF) amplifiers, high speed clocks, switched mode power supplies (SMPSs), and other high speed switching applications.

The TSM3443CX6 RFG is constructed with a monolithic structure that consists of four cells and a fifth gate terminal. The package is designed to be compact and is RoHS compliant. The transistor has a very low on-resistance and minimal gate charge, which makes it ideal for high speed switching applications. It also has an improved breakdown voltage and excellent thermal characteristics, making it well suited for high power applications.

The TSM3443CX6 RFG’s upper/lower switch can be controlled by two independent signals, creating two independent circuits with latch-off characteristics. This allows for creating higher frequency switching with less power consumption. The TSM3443CX6 RFG also has a built-in thermal-sensing feature that reduces temperature-dependent on-resistance. This feature provides better control and stability in high power applications and helps reduce heat-generation.

The TSM3443CX6 RFG is made with Toshiba’s reliable Field-Plated-Well (FPW) process, which features a low thermal resistance and improved power handling, resulting in higher efficiency and improved transistor performance. The TSM3443CX6 RFG also features an ingenious switching structure that helps reduce power consumption in the application circuit by operating with reduced voltages. Additionally, this innovative design reduces electromagnetic interference (EMI) radiation, which helps improve overall power control.

The TSM3443CX6 RFG is a reliable and cost-effective choice for applications that require high switching speed and high power dissipation. It is especially well-suited for RF amplifiers, high speed clocks, SMPSs, high power switching designs, and more. With its advanced design and high performance, it is the perfect choice for a wide range of applications.

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