TSM3N80CH C5G

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The TSM3N80CH C5G is a device that falls within the Transistors - FETs, MOSFETs - Single category. It is a high voltage, low on-resistance, N-channel MOSFET suited for load switching and driving applications. In addition, the advantages of this N-Channel MOSFET can be applied in various fields, including but not limited to, power management, portable electronics, power systems, LED lighting and so on.

The TSM3N80CH C5G carries a current rating of 8A, which makes it suitable for applications requiring high current. Its total gate charge (Qg) is 7.5nC, which ensures its quick switching speed even at higher current levels. Additionally, its threshold voltage (Vt) is 3.2V, which is quite low and provides a high-gain device with a low operating voltage. The maximum operating temperature rated for this device is 125°C, which makes it suitable for use in higher-temperature environments.

The TSM3N80CH C5G has excellent on-state resistance (RDSon) and off-state leakage current (Ioff) characteristics, which make it suitable for the source and sink applications. The device has an Rds of approximately 0.032Ω, which ensures low conduction losses. It also has a low input capacitance of about 1.6pF, which allows it to switch quickly and accurately. Moreover, the device has a low gate charge (Qg) of 7.5nC. This reduces gate drive requirements, allowing the device to be driven quickly and accurately.

The TSM3N80CH C5G operating principle is based on the principle of creating a conducting channel between the source and drain, by applying a voltage (Vgs) to the gate terminal. When the voltage at the gate terminal is less than the threshold voltage (Vt) of the device, the device will remain in an off-state. When the gate voltage (Vgs) exceeds the threshold voltage (Vt), the channel is created and current flows from source to drain. The channel is maintained by the gate bias of the device, and the Drain to Source voltage (Vds) determines the current magnitude.

The TSM3N80CH C5G is an ideal device for load switching and driving applications, given its excellent on-state resistance (RDSon) and low off-state leakage current (Ioff). Moreover, the device has a high current rating and a maximum operating temperature of 125°C and thus can be used in high-temperature environments. Additionally, its low input capacitance, low gate charge, low threshold voltage and low drain-to-source on-state resistance ensure fast and accurate switching. Finally, its gate voltage is switched to create and maintain a conducting channel between the source and drain, thereby allowing current to flow from source to drain.

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