Allicdata Part #: | TSM3N90CIC0G-ND |
Manufacturer Part#: |
TSM3N90CI C0G |
Price: | $ 1.62 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 900V 2.5A ITO220 |
More Detail: | N-Channel 900V 2.5A (Tc) 94W (Tc) Through Hole ITO... |
DataSheet: | TSM3N90CI C0G Datasheet/PDF |
Quantity: | 988 |
1 +: | $ 1.47420 |
10 +: | $ 1.33119 |
100 +: | $ 1.06987 |
500 +: | $ 0.83213 |
1000 +: | $ 0.68948 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | ITO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 94W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 748pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5.1 Ohm @ 1.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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A TSM3N90CI C0G is a N-channel enhancement mode MOSFET (metal-oxide-semiconductor field-effect transistor) that is able to distribute high currents while staying in an extremely low Vgs setting. This MOSFET is a perfect choice for applications that require low-power switching and it also works well in high-frequency switching applications. This MOSFET is able to drive high currents with nearly no power loss, which is why it is so popular for use in many types of devices.
This MOSFET has the ability to dissipate very high currents for a wide range of conditions, which makes it ideal for high-frequency switching applications. It has a fast switching time due to its low-power consumption and low-level input voltage devices. Similarly, its high-current handling capability allows for a very large range of power-level switching. This makes the TSM3N90CI C0G an ideal choice for applications that require precise switching with low power consumption and power loss.
As with all MOSFETs, the TSM3N90CI C0G uses its gate as the control element. In this MOSFET, a positive voltage is applied to the gate, which in turn attracts current carriers. This creates a conductive channel from the source to the drain, allowing current to pass through. The amount of current that passes through is proportional to the amount of voltage being applied to the gate. In other words, the more voltage that is applied, the more current that is allowed to pass through the channel, which is why the TSM3N90CI C0G is an ideal choice for applications that require precise control of the current.
The TSM3N90CI C0G also has a variety of features that make it ideal for a wide array of applications. These features include a low input capacitance, an offering of larger package sizes, a low on-resistance, an extremely low Vgs setting and a low gate charge. Additionally, its low temperature coefficient ensures that it performs consistently at all temperature levels.
The TSM3N90CI C0G is most commonly used for power switching applications, such as dc-dc converters, voltage regulators, motor drives and power conversion systems. It is also commonly used in lighting, LED, and LED driver applications, as well as in audio amplifier and video amplifier systems. This MOSFET is also well-suited for automotive applications, due to its high-current handling capability, low-power dissipation, and a wide range of features.
The TSM3N90CI C0G is an excellent MOSFET choice for applications that require superior switching performance, low power dissipation and precise current control. It is able to dissipate very high current levels, while staying in an extremely low Vgs set point, which allows it to be used in a wide range of applications. Moreover, its various features provide a versatile device that is well-suited for many types of devices. All of these qualities make it an ideal choice for many power switching applications.
The specific data is subject to PDF, and the above content is for reference
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