TSM3N90CP ROG

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252, (D-Pak)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	94W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	748pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	5.1 Ohm @ 1.25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.5A (Tc)
Drain to Source Voltage (Vdss):	900V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The TSM3N90CP ROG (Reduced On-resistance Gate) is a small electrically operated MOSFET device from ON Semiconductor. It is a small power MOSFET device that can provide superior system performance and cost savings for applications that require medium to high output current with low input voltage. This device has been designed to provide low R_DS(ON) and minimum switching losses at higher frequencies. This device is also suitable for high power supplies and automotive systems where current levels of 4.5 A to 6.1A are required. The TSM3N90CP ROG is designed to offer excellent power dissipation of 2W at a junction temperature of 25°C under no-load conditions.

Application Field

The TSM3N90CP ROG is mainly used in automotive applications due to its high output current capabilities. This device can be used for driving LEDs, switching inductive loads, dc-dc converters, power distribution systems, and DC motor controllers. It offers low distortion and fast switching performance for improved system efficiency and reliability. It is also suitable for high voltage applications such as braking and heating applications due to its ability to operate up to 900V with low on-state resistance. It is also suitable for use in high temperature applications with its high-temperature operating junction capability.

Working Principle

The TSM3N90CP ROG is an N-channel enhancement-mode MOSFET device with reduced on-resistance characteristics. This device utilizes a charge compensation technology that is designed to reduce the gate charge and minimize the on-state resistance. It has an inverting cell structure with the source connected to the body, the body connected to the transistor-gate, and the gate connected to the drain. The output current is controlled by the current flowing through the body and gate, which is determined by the voltage applied to the gate. This device has two operating modes: on-state and off-state. In the on-state mode, current flows through the device as long as the gate voltage is greater than the threshold voltage. In the off-state mode, the device is biased against the applied voltage and no current flows through the device.

Benefits

The TSM3N90CP ROG offers many benefits for automotive applications including superior system performance, improved efficiency, and cost savings. This device is designed to provide low R_DS(ON) and minimum switching losses at higher frequencies, which helps reduce power consumption and improve system reliability. This device also offers excellent power dissipation with no thermal runaway and no secondary breakdown, allowing it to be used in high-temperature applications. Finally, this device has a wide operating voltage range, which makes it suitable for applications with different input voltages.

Conclusion

The TSM3N90CP ROG is a small electrically operated MOSFET device from ON Semiconductor designed to provide low R_DS(ON) and minimum switching losses at higher frequencies. This device is mainly used in automotive applications due to its high output current capabilities and is suitable for use in high temperature and high voltage applications. It also offers many benefits for automotive applications, such as superior system performance, improved efficiency, and cost savings, as well as excellent power dissipation with no thermal runaway and no secondary breakdown.

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