TSM3N90CZ C0G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TSM3N90CZ C0G is a deep trench vertical N-channel field effect transistor (FET) developed for use in a wide range of applications. The device is designed for low-current and low-power applications such as DC/DC converters and power solutions.

The device features an N-channel enhancement mode transistor with a deep trench structure. The transistor is constructed with a single channel, which allows for an efficient transfer of the electrical charge through the transistor to the drain. This feature makes it ideal for low-frequency switching applications such as DC/DC converters and power solutions.

The device has a breakdown voltage of 35V and a maximum drain-source voltage of 25V. It also has a threshold voltage of 3V and an on-resistance of 1.5-mΩ. The device is designed to operate within a temperature range of -40 to 125˚C and offers a maximum power dissipation of 1W.

The device offers excellent blocking characteristics, which provide protection from reverse current. Additionally, the device features an integrated capacitance that helps reduce the impedance of the device and dampen the noise generated by the electrical switching. This helps to improve the overall efficiency of the device.

The operating principle of the device is based on the behavior of the electric field. The device uses a voltage applied by the gate electrode to create an electric field across the device. This electric field is then used to control the conductivity of the device, allowing for the efficient transfer of electrical current.

The device is most commonly used in DC/DC converters, power solutions, and low-frequency switching applications. It is also used in electronic devices such as computers, televisions, and other types of electronic equipment.

The TSM3N90CZ C0G is a versatile and reliable FET that can be used in a variety of applications. Its low-current and low-power characteristics make it an ideal choice for a variety of applications. Additionally, its blocking characteristics, integrated capacitance, and excellent operating temperature range make it an ideal choice for applications in which low power and reliability are key.

The specific data is subject to PDF, and the above content is for reference