TSM340N06CH X0G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TSM340N06CH X0G MOSFET is a superior-quality power device designed with dynamic 3D structure integration benefits. It is suitable for both high-power and low-power applications and is most often used in DC-to-DC conversion, AC switching, buck boost convertor and isolated power converter applications. It is particularly useful in applications where its superior Rds(on) characteristics and low Qrr are essential. This MOSFET is built with a deep trench structure and an optimized active area that allows for increased power density, improved thermal performance and reduced power loss during switching operations.

The TSM340N06CH X0G uses an N-channel, enhancement-mode vertical MOSFET. This type of MOSFET structure offers superior electrical performance when compared to their p-channel counterparts by providing superior Qrr and lower Rds(on) components. The die includes a triple-layer Schottky diode which reduces the switching losses and enables faster switching operations, and a drain guard guard layer which helps protect the device from voltage spikes and ensures better robustness during normal operation.

The TSM340N06CH X0G uses a special design technique called dynamic 3D structure integration, which helps to reduce the number of components required in a given power device design. The dynamic 3D structure integration also helps to reduce the size of the package, enabling a more compact design and higher power density. Additionally, this technique reduces the level of overall power loss during switching operation, and improves the device\'s thermal performance, allowing them to sustain higher current ratings without the need for any extra circuitry or heat sinks.

The working principle of the TSM340N06CH X0G is basically the same as any other MOSFET. When a gate voltage is applied to the control gate of the device, the MOSFET is turned on and current can flow between the source and the drain terminals. The higher the gate voltage, the larger the current will be. As the gate voltage is increased, the drain-source resistance (R_DS(ON)) is decreased, so the amount of current flowing in the MOSFET is proportional to the gate voltage. This allows for precise control of the current flow, making it ideal for a variety of applications.

The TSM340N06CH X0G is an excellent choice for any application where high-performance MOSFETs are desirable. Its low Qrr and low Rds(on) characteristics, along with its dynamic 3D structure integration features, makes it an ideal solution for DC-to-DC conversion, AC switching, buck boost Convertors and isolated power converter applications. When combined with other circuit components, it is capable of providing superior performance in any power MOSFET application.

The specific data is subject to PDF, and the above content is for reference