TSM3401CX RFG

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.25W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	551.57pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	2.7nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	60 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	3A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The TSM3401CX RFG is a high-performance thin-film transistor (TFT) made in a single-well process. The RFG is based on a silicon-on-insulator (SOI) technology with a low gate-drain voltage (Vds) of 1.8V. The gate oxide layer is only 2 nanometers thick with a total gate-to-drain leakage current of less than 1 microamp. The RFG has a maximum drain current of 0.18 mA and is available in sizes ranging from 0.35 mm to 1 mm.The TSM3401CX RFG is widely used in a variety of electronic applications, including portable devices, flat panel displays, microcontrollers, and power management. Its low-power consumption and thin-film form factor make it an ideal choice for applications with limited power consumption, size, and weight concerns.The RFG has three primary components: the gate, the drain, and the source. The gate and drain are connected to the semiconductor substrate and the source is separated from the substrate by the gate oxide layer. The gate is used to control the current flow between the drain and the source and, as such, is responsible for switching the RFG on and off. The drain acts as an output and is used to provide current to the source, which acts as an input.The RFG works on the principle of field effect transistor (FET). When a voltage is applied to the gate, a depletion layer is formed in the substrate. Depending on the type of FET (JFET or MOSFET), the gate voltage determines the size of the depletion layer, which determines the resistance between the drain and source, and thus the current flow. The RFG also uses a gate oxide layer to reduce the power consumption of the device.In addition to low power consumption and small size, the TSM3401CX RFG also provides short switching times and is able to operate at frequencies up to 20 MHz. It features a small blocking capacitance, which reduces the input and output capacitance value, and a low voltage (Vgs) tolerance, which allows the RFG to operate at very low voltages.The TSM3401CX RFG is an ideal choice for a wide range of applications, including RF power amplifiers, mobile devices, and digital logic circuits. Its small size, low-power consumption, and high performance make it the perfect choice for space-constrained and energy-restricted applications.

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