Allicdata Part #: | TSM3N80CZC0G-ND |
Manufacturer Part#: |
TSM3N80CZ C0G |
Price: | $ 1.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CHANNEL 800V 3A TO220 |
More Detail: | N-Channel 800V 3A (Tc) 94W (Tc) Through Hole TO-22... |
DataSheet: | TSM3N80CZ C0G Datasheet/PDF |
Quantity: | 988 |
1 +: | $ 1.43640 |
10 +: | $ 1.29591 |
100 +: | $ 1.04145 |
500 +: | $ 0.80999 |
1000 +: | $ 0.67114 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 94W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 696pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.2 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TSM3N80CZ C0G is a type of MOSFET (metal-oxide-semiconductor field effect), which provides efficient and inexpensive power control in numerous applications. It is classified, technically, as a single enhancement type MOSFET. This makes it suitable for load switching and voltage regulation within the audio, computer and telecommunications industries.
Like any other type of transistor, the TSM3N80CZ C0G works by controlling the current flowing through it, depending on the voltage applied. The transistor is comprised of two sets of terminals: the gate (G) and the drain-source (D-S). To operate the transistor, a voltage is applied to the gate, which determines the voltage applied to the drain-source and the amount of current that flows through it. This allows for highly efficient power control.
The TSM3N80CZ C0G has a range of applications in industries such as consumer electronics and automotive. In consumer electronics, it is used to control the power output of audio components, such as amplifiers and speakers. It is also used in automotive applications, as it can be used in place of traditional relays since it is able to switch higher currents while consuming less power.
The TSM3N80CZ C0G is also used in applications in the computer and telecommunications industries. Specifically, in the computer industry, it is used to improve power management in motherboards. In the telecommunications industry, it is used in cellular base stations and devices, such as cell phones and modems, to control the power of the radio signal.
The most remarkable feature of the TSM3N80CZ C0G is its ability to switch large currents while consuming minimal amounts of power. This is made possible by the device’s design, which includes a silicon substrate layer, a gate oxide layer and a gate terminal. The silicon substrate acts as a conductive layer, while the gate oxide layer provides insulation so that the current only flows when the gate voltage is present. The gate terminal is where the voltage is applied to, which allows for the current to flow.
In conclusion, the TSM3N80CZ C0G is a powerful and efficient MOSFET device, which is used for numerous applications in the consumer electronics, automotive, computer, and telecommunications industries. Its highly efficient power control capabilities make it an ideal choice for power management in numerous products. Its ability to switch large currents with minimal power consumption means that it is also an ideal choice for voltage regulation applications.
The specific data is subject to PDF, and the above content is for reference
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