ZVN3306ASTOB Allicdata Electronics
Allicdata Part #:

ZVN3306ASTOB-ND

Manufacturer Part#:

ZVN3306ASTOB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 0.27A TO92-3
More Detail: N-Channel 60V 270mA (Ta) 625mW (Ta) Through Hole E...
DataSheet: ZVN3306ASTOB datasheetZVN3306ASTOB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 18V
FET Feature: --
Power Dissipation (Max): 625mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: E-Line (TO-92 compatible)
Package / Case: E-Line-3
Description

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The ZVN3306A is one of the latest single-pole, double-throw MOSFETs. It is applied to a variety of applications due to its unique features. The main features of this MOSFET are the excellent ESD protection, low on-resistance RDS(on) and maximum gate-source voltage VGSS of up to 20V. Additionally, it has a very low operating temperature which makes it suitable for various uses.

In the field of power management, the ZVN3306A is used in a variety of applications such as battery charging, DC-DC converters, gate drivers, motor control, DC-AC inverters, and power switches. Additionally, due to its low RDSon, it finds its applications in audio amplifiers and RF amplifiers. The ZVN3306A also has low on-resistance RDS(on) which makes it an efficient device for boosting the power efficiency of circuits.

The working principle of the ZVN3306A is based on the MOSFET effect. This device is constructed using a metal oxide semiconductor field effect transistor or MOSFET. It consists of a metal oxide gate, a source, and a drain. It works by having the voltage applied to the gate, which then modulates the conductivity of the channel between the source and drain. This channel can be made to be either high or low resistance depending on the required current flow.

In operation, when the voltage applied to the gate increases, the current flow between the source and drain increases as well. This is because the oxide gate layer reduces the resistance of the channel. On the other hand, when the voltage applied to the gate decreases, the current flow decreases due to the increased resistance in the channel. This is why the ZVN3306A is considered to be an efficient device for power management.

In addition, this device is also suitable for gate drivers. A gate driver is a device which is used to increase the voltage on a MOSFET’s gate to increase the current flow in the circuit. The ZVN3306A is an efficient device for this use due to its high RDSon. Additionally, due to its low operating temperature, it can be used in high temperature applications.

Overall, the ZVN3306A is an efficient single-pole, double-throw MOSFET which is suitable for various applications. Its features and advantages make it a great choice for power management and gate drivers. Additionally, its low RDSon and temperature make it an ideal choice for RF amplifiers and audio amplifiers.

The specific data is subject to PDF, and the above content is for reference

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