ZVN3320ASTOA Discrete Semiconductor Products |
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Allicdata Part #: | ZVN3320ASTOATR-ND |
Manufacturer Part#: |
ZVN3320ASTOA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 200V 0.1A TO92-3 |
More Detail: | N-Channel 200V 100mA (Ta) 625mW (Ta) Through Hole ... |
DataSheet: | ZVN3320ASTOA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Power Dissipation (Max): | 625mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 45pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 25 Ohm @ 100mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The ZVN3320A Small Signal MOSFET is a low voltage N-channel MOSFET designed for switching and small signal amplifier applications. It has a breakdown voltage of 5V and a low threshold voltage of 1.5V. It is a high power MOSFET, with a maximum drain-source breakdown voltage of 5V and a maximum drain current of 355mA. It is extremely efficient, with a total gate charge of only 65nC. The ZVN3320A is a single N-channel MOSFET and is available in a TO-220 package.
The ZVN3320A has two primary applications: switching and amplifying small signals. In its switching application, it is used to control the voltage between two nodes. It can also be used to switch on and off a voltage source. In its amplifying application, it is used to amplify small signals, such as audio signals. The ZVN3320A is particularly useful for audio and microcontroller applications, as it has extremely low noise, low input capacitance, and low on-state resistance.
The working principle of the ZVN3320A is simple. It is an N-channel MOSFET, meaning that it has an N-type material between the source and the drain contacts. When a voltage is applied to the Gate of the MOSFET, the majority carriers move in the N-channel, and the majority carriers in the P-channel move away from the drain. This creates a region of increased conduction between the source and the drain, allowing current to flow. When the Gate voltage is removed, the majority carriers flow back to their original positions, and the conduction between the source and the drain is reduced, reducing the current flow.
The ZVN3320A is an extremely versatile MOSFET, as it can be used in both switching and amplifier applications. It offers excellent efficiency, low noise, and low output capacitance, making it an ideal choice for audio and low power applications. Its low gate charge also makes it an ideal choice for high-frequency applications. The ZVN3320A is a great choice for anyone looking for a powerful and efficient MOSFET for their applications.
The specific data is subject to PDF, and the above content is for reference
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