ZVN3306FTA Discrete Semiconductor Products |
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Allicdata Part #: | ZVN3306FTR-ND |
Manufacturer Part#: |
ZVN3306FTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 150MA SOT23-3 |
More Detail: | N-Channel 60V 150mA (Ta) 330mW (Ta) Surface Mount ... |
DataSheet: | ZVN3306FTA Datasheet/PDF |
Quantity: | 33000 |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 330mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 35pF @ 18V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 150mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZVN3306FTA is a zinc-coated, depletion-mode, P-channel, MOSFET developed for temperature-stable high speed switching and amplifier applications. It is also known as an integrated drain and source connected FET due to its integrated output source and drain pins.
The ZVN3306FTA has a nominal gate-source threshold voltage of about -3 volts, which allows for further triggering by logic signals. It also has an on-state drain-source resistance of about 0.07 ohms in the on-state, making it a suitable choice for low power applications such as switching and amplifying. This MOSFET also has the advantage of being quite temperature-stable, meaning it has a rather consistent level of gate-source threshold voltage while being subjected to different levels of temperature.
The ZVN3306FTA is suitable for a variety of applications, including audio amplifying, DC-DC converters, and motor drivers. It is well-suited for high speed switching applications due to its low gate-source threshold voltage and low on-state drain-source resistance. Additionally, the MOSFET’s temperature stability makes it suitable for temperature-dependent applications, such as in automotive applications, where temperature may cause sudden changes in resistance.
The ZVN3306FTA works on the principle of field-effect transistor technology, known as FETs. This type of transistor is based on the principle of controlling electric current as a result of voltage applied across two terminals. It does this by relying on a gate input for controlling its on-state current by altering the amount of electrons in a channel between its drain and source. When no voltage is applied to the gate, the FET is in its off-state, meaning that no current flows through its channel. When voltage is applied to the gate, then electrons are attracted to the gate and the channel is opened, allowing current to flow through. This process makes the ZVN3306FTA suitable for use in high speed switching and amplifier applications.
The ZVN3306FTA is a versatile FET that is suitable for a variety of functions. It exhibits outstanding temperature stability, low gate-source threshold voltage, and low on-state drain-source resistance, which makes it suitable for low power applications such as switching and amplifying. Additionally, its field-effect transistor technology makes it suitable for high speed switching and amplifying, while its temperature stability makes it a suitable choice for temperature-dependent applications.
The specific data is subject to PDF, and the above content is for reference
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