Allicdata Part #: | ZVN3310ASTZ-ND |
Manufacturer Part#: |
ZVN3310ASTZ |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 200MA TO92-3 |
More Detail: | N-Channel 100V 200mA (Ta) 625mW (Ta) Through Hole ... |
DataSheet: | ZVN3310ASTZ Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.22534 |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Package / Case: | E-Line-3 |
Supplier Device Package: | E-Line (TO-92 compatible) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 625mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 40pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
ZVN3310ASTZ Application Field and Working Principle
The concept of transistors, or Field Effect Transistors (FETs), has been a core element of electronic technology since their invention in the mid-20th century. A FET is a three-terminal, two-port semiconductor device constructed from two electronically coupled types of conductors. These can be either intrinsic and extrinsic. A FET can be utilized in many applications, but one particular device, the ZVN3310ASTZ, is used in a variety of scenarios due to its unique characteristics.
The ZVN3310ASTZ is a N-Channel enhancement-mode power MOSFET. This device is notably smaller than many of its counterparts, due to its vertical structure and lack of protruding leads. This allows for increased flexibility and space-efficiency in a variety of applications. Additionally, this device offers a wide drain-source voltage range (from 8V to 80V) and has very low on-state resistance values.
The ZVN3310ASTZ is typically used in power-delivery applications, but can also be used in any type of electronic circuit. Its narrow body and small footprint make it ideal for use in portable and/or space-limited applications, such as portable electronic devices. Additionally, its large drain-source range makes it a good choice for applications involving high-voltage AC power-distribution equipment, as well as many other electronic products.
The working principle of the ZVN3310ASTZ is based on the transfer of positive charge carriers (i.e. electrons) between the device\'s source and drain terminals. When a bias voltage is applied to the gate terminal of the device, the charge carriers are attracted to the gate electrode and flow through the thin oxide layer (or gate oxide) beneath it. This then creates a conductive p-n semiconductor junction between the gate and the source-drain region, which then allows current to flow between the source and the drain. This current flow can only occur when the gate bias voltage exceeds a threshold known as the Threshold Voltage.
Due to their small size and high power-delivery efficiency, the ZVN3310ASTZ has become an indispensable part of many electronic designs. This device can be highly beneficial for any application, as its immense operational flexibility allows for unprecedented speed, power, and efficacy. Although this device is relatively small, it is capable of providing significant power, making it ideal for use in space-limited and/or high-density circuit layouts.
In conclusion, the ZVN3310ASTZ is a versatile and efficient device that is ideal for a wide range of applications. Its small size, high power delivery capabilities, and low on-state resistance values make it the perfect choice for creating powerful and space-efficient electronic designs.
The specific data is subject to PDF, and the above content is for reference
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