Allicdata Part #: | ZVN3310A-ND |
Manufacturer Part#: |
ZVN3310A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 200MA TO92-3 |
More Detail: | N-Channel 100V 200mA (Ta) 625mW (Ta) Through Hole ... |
DataSheet: | ZVN3310A Datasheet/PDF |
Quantity: | 3770 |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 625mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 40pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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ZVN3310A is a type of reflective unipolar field-effect transistor (FET) that operates using an insulated gate. Essentially, an insulated gate is like a switch that turns the current flow on and off in the circuit. Specifically, the ZVN3310A is an N-channel enhancement mode MOSFET, meaning the device is intended for use with a positive gate threshold voltage. The channels are formed by the deposition of an oxyde layer onto a conducting region and can be seen as a conductive line between the source and drain of the transistor.
The ZVN3310A can be used in a variety of applications such as voltage regulation and switching. The device has a particularly high performance due to its low on-resistance -- usually less than 1 ohm. The low resistance of the device ensures a steady current flow through the circuit and avoids any major fluctuations, making it ideal for use in power supplies and other sensitive electronics.
The ZVN3310A works by using an electric field to modify the conductivity of the channel between the source and drain. When an electric field is applied to the insulated gate, a current flows through it and modulates the channel, controlling the flow of current from the source to the drain and vice versa. In this way, the gate acts like a switch that can be used to regulate current flow in the circuit and thus the overall output of the system.
The ZVN3310A is particularly useful in applications that require a low output impedance and a high current flow. The device can work as a voltage regulator, and can also be used as a switch for regulating current flow in a variety of systems. It is also useful for switching at higher frequencies, such as in radio frequency applications. As an added bonus, the device also has a very low power consumption, making it a cost-effective and efficient solution for many applications.
In summary, the ZVN3310A is an N-channel enhancement mode MOSFET with an insulated gate that allows for the regulation of current flow in the circuit. The device is useful for applications that require a low output impedance and high current flow and can be used as a switch or voltage regulator. The low power consumption of the device makes it an efficient and cost-effective solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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