| Allicdata Part #: | ZVN3310ASTOA-ND |
| Manufacturer Part#: |
ZVN3310ASTOA |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 100V 200MA TO92-3 |
| More Detail: | N-Channel 100V 200mA (Ta) 625mW (Ta) Through Hole ... |
| DataSheet: |  ZVN3310ASTOA Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 10 Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 40pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 625mW (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | E-Line (TO-92 compatible) |
| Package / Case: | E-Line-3 |
Description
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The ZVN3310A N-channel MOSFET is a 30V, 8A single-channel field effect transistor specifically designed for efficient, low-voltage switching applications. The ZVN3310A is primarily used as an enhancement mode switch that can be used to drive a current through an external load. The ZVN3310A is an efficient, compact and versatile transistor which offers excellent switching characteristics and a low gate-drain capacitance, making it suitable for use in low voltage, high-frequency switching applications.The ZVN3310A\'s gate-source voltage is usually set to a maximum of 30V to ensure reliable operation. It features a low input capacitance and a negative gate threshold voltage, which allows for rapid switching. The ZVN3310A also features a low on-state resistance, which helps to minimize power losses and minimize power consumption.The ZVN3310A is typically used in circuits that require fast switching, such as stepper motor speed control, fan speed control, adjustable power supplies and amplifiers. The ZVN3310A can also be used in a variety of other applications, such as logic-level shift applications, analog switching applications and portable electronic device applications.The ZVN3310A is based on a vertical MOSFET structure, which allows for improved switching performance and lower power consumption than traditional lateral MOSFETs. The ZVN3310A\'s internal architecture includes a gate electrode, source and drain regions, and a blocking diode to protect against short circuits.The ZVN3310A operates on a principle known as the Drain-Source Voltage-Drop (VDS). When a positive voltage is applied to the Gate (G) of the ZVN3310A, it causes a channel to form between the Drain (D) and Source (S) of the device, allowing current to flow from the drain to the source. The voltage at which the device turns on (the "on-threshold voltage") is known as the threshold voltage. The on-state resistance (RDSon) is the resistance of the channel when it is conducting.The ZVN3310A is a versatile transistor, capable of providing both efficient and reliable power switching. Its low capacitance and low on-state resistance ensures that it is suitable for a wide variety of switching applications. The ZVN3310A is an ideal choice for high frequency, low voltage switching applications.
The specific data is subject to PDF, and the above content is for reference
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