Allicdata Part #: | ZVN3306FTC-ND |
Manufacturer Part#: |
ZVN3306FTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 0.15A SOT23-3 |
More Detail: | N-Channel 60V 150mA (Ta) 330mW (Ta) Surface Mount ... |
DataSheet: | ZVN3306FTC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 150mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 35pF @ 18V |
FET Feature: | -- |
Power Dissipation (Max): | 330mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The ZVN3306FTC is a fast, low-noise N-channel enhancement mode Power MOSFET. It is a 20V MOSFET with a low gate charge, low on-state resistance, and minimal input and output capacitance with a logic-level threshold voltage. With its built-in Schottky diode, the FET also suits a variety of applications in switching applications. This article seeks to explain the purpose and working principle of the ZVN3306FTC.
The ZVN3306FTC is the ideal choice for use in high-frequency switch drivers, mobile device power supplies, BTS power management circuits, and switching regulators. With a minimum on-state resistance of 0.2 Ohm and a maximum drain-source voltage of 20V, it offers significant power savings at higher switching frequencies. Additionally, its built-in Schottky diode helps protect against reverse current and further helps stabilize power supply circuits.
The ZVN3306FTC provides excellent switching speed and noise immunity, with a minimum switching time of 4ns and a maximum noise reduction of 30dB. Its low gate charge and low capacitance also ensure that it is well suited for use in switching applications. This can be especially beneficial in the realm of mobile device power supplies, which are increasingly in need of faster switching speeds to meet consumer demand.
The ZVN3306FTC uses a process called enhancement mode to control the flow of drain current. In enhancement mode, the gate voltage threshold (VGS(th)) must exceed the VGS applied before drain current begins to flow. This process allows for higher currents to be switched with the same amount of power. Additionally, the device’s logic-level threshold voltage allows it to operate at even lower voltages compared to traditional MOSFETs.
The ZVN3306FTC is also thermally protected, meaning that it will shut down drain current if the temperature of the device rises above its maximum operating temperature. This ensures the longevity of the device and helps prevent it from being overloaded and damaging other devices in the circuit.
In conclusion, the ZVN3306FTC is an excellent choice for a variety of applications. Its low gate charge, low on-state resistance, low input and output capacitance, and logic-level threshold voltage combined with its high switching speed and thermal protection make it exceptionally versatile. This makes it ideal for use in mobile device power supplies, high-frequency switch drivers, and other switching applications.
The specific data is subject to PDF, and the above content is for reference
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