ZVN3306ASTZ Allicdata Electronics
Allicdata Part #:

ZVN3306ASTZ-ND

Manufacturer Part#:

ZVN3306ASTZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 0.27A TO92-3
More Detail: N-Channel 60V 270mA (Ta) 625mW (Ta) Through Hole E...
DataSheet: ZVN3306ASTZ datasheetZVN3306ASTZ Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 625mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 18V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The ZVN3306ASTZ is a single N-Channel MOSFET which belongs to the ZVN family of transistors. It is a depletion-mode, large-signal MOSFET (metal–oxide–semiconductor field-effect transistor), designed for use in high-voltage, large-current switching applications such as clocked logic and power management. The device can switch currents of up to 40Amps and can handle gate voltages up to +/-15V.

The ZVN3306ASTZ MOSFET has a drain-source breakdown voltage rating of 30V and an on-state resistance of just 14 mOhms. It also has a gate-source threshold voltage rating of 2.25V and a drain-source capacitance of just 0.8pF. This combination of features makes the device ideal for use in high-performance switching applications, such as high-speed logic gates, motor control, frequency converters and high-speed switching. The device is also suitable for use in high-voltage/high-current switching applications, such as switch mode power supply (SMPS) control.

The ZVN3306ASTZ MOSFET is a three-terminal device consisting of a source, gate and drain. The source and gate terminals form a flat region of semiconductor material (the channel) which can carry current when the gate-source voltage is increased beyond the threshold voltage. The thickness of the channel can be adjusted by varying the gate-source voltage (VGS). When a suitable voltage is applied, electrons form a conducting channel between the source and drain, allowing current to flow. When the voltage goes back to zero, the device becomes non-conductive again.

The ZVN3306ASTZ is a robust device which can handle large voltages and currents while providing excellent control. The device is also extremely fast, with a switching time (turn-on) of just 250ns and a fall time (turn-off) of only 300ns. As such, the device is ideal for use in high-speed switching applications.

In summary, the ZVN3306ASTZ is a single N-Channel MOSFET and is ideal for use in large-voltage, large-current switching applications. The device features excellent control and fast switching times and is suitable for use in a variety of applications including clocked logic, power management and high-speed switching applications.

The specific data is subject to PDF, and the above content is for reference

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