Allicdata Part #: | ZVN3306ASTZ-ND |
Manufacturer Part#: |
ZVN3306ASTZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 0.27A TO92-3 |
More Detail: | N-Channel 60V 270mA (Ta) 625mW (Ta) Through Hole E... |
DataSheet: | ZVN3306ASTZ Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Package / Case: | E-Line-3 |
Supplier Device Package: | E-Line (TO-92 compatible) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 625mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 35pF @ 18V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 270mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZVN3306ASTZ is a single N-Channel MOSFET which belongs to the ZVN family of transistors. It is a depletion-mode, large-signal MOSFET (metal–oxide–semiconductor field-effect transistor), designed for use in high-voltage, large-current switching applications such as clocked logic and power management. The device can switch currents of up to 40Amps and can handle gate voltages up to +/-15V.
The ZVN3306ASTZ MOSFET has a drain-source breakdown voltage rating of 30V and an on-state resistance of just 14 mOhms. It also has a gate-source threshold voltage rating of 2.25V and a drain-source capacitance of just 0.8pF. This combination of features makes the device ideal for use in high-performance switching applications, such as high-speed logic gates, motor control, frequency converters and high-speed switching. The device is also suitable for use in high-voltage/high-current switching applications, such as switch mode power supply (SMPS) control.
The ZVN3306ASTZ MOSFET is a three-terminal device consisting of a source, gate and drain. The source and gate terminals form a flat region of semiconductor material (the channel) which can carry current when the gate-source voltage is increased beyond the threshold voltage. The thickness of the channel can be adjusted by varying the gate-source voltage (VGS). When a suitable voltage is applied, electrons form a conducting channel between the source and drain, allowing current to flow. When the voltage goes back to zero, the device becomes non-conductive again.
The ZVN3306ASTZ is a robust device which can handle large voltages and currents while providing excellent control. The device is also extremely fast, with a switching time (turn-on) of just 250ns and a fall time (turn-off) of only 300ns. As such, the device is ideal for use in high-speed switching applications.
In summary, the ZVN3306ASTZ is a single N-Channel MOSFET and is ideal for use in large-voltage, large-current switching applications. The device features excellent control and fast switching times and is suitable for use in a variety of applications including clocked logic, power management and high-speed switching applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ZVN3306ASTOA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.27A TO9... |
ZVN3306ASTOB | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.27A TO9... |
ZVN3306FTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.15A SOT... |
ZVN3310ASTOA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 200MA TO... |
ZVN3310FTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 100MA SO... |
ZVN3320ASTOB | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 200V 0.1A TO9... |
ZVN3320ASTZ | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 200V 0.1A TO9... |
ZVN3320FTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 200V 0.06A SO... |
ZVN3310ASTOB | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 200MA TO... |
ZVN3320FTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 200V 60MA SOT... |
ZVN3320A | Diodes Incor... | 0.58 $ | 3059 | MOSFET N-CH 200V 0.1A TO9... |
ZVN3320ASTOA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 200V 0.1A TO9... |
ZVN3306ASTZ | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 0.27A TO9... |
ZVN3310ASTZ | Diodes Incor... | 0.25 $ | 1000 | MOSFET N-CH 100V 200MA TO... |
ZVN3306FTA | Diodes Incor... | -- | 33000 | MOSFET N-CH 60V 150MA SOT... |
ZVN3310FTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 100V .1A SOT2... |
ZVN3306A | Diodes Incor... | -- | 8315 | MOSFET N-CH 60V 270MA TO9... |
ZVN3310A | Diodes Incor... | -- | 3770 | MOSFET N-CH 100V 200MA TO... |
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