ZVN3310FTA Discrete Semiconductor Products |
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Allicdata Part #: | ZVN3310FTR-ND |
Manufacturer Part#: |
ZVN3310FTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V .1A SOT23-3 |
More Detail: | N-Channel 100V 100mA (Ta) 330mW (Ta) Surface Mount... |
DataSheet: | ZVN3310FTA Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 330mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 40pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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ZVN3310FTA Application Field and Working Principle
ZVN3310FTA is a type of N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is used for various electronic circuits, such as audio amplifiers, electronic switching circuits, and power switching circuits. This type of MOSFET is characterized by its low on-state resistance (RDS) and fast switching speed. It has an excellent thermal performance, making it ideal for a wide range of application fields.
This type of MOSFET has an N-Channel Silicon-on-Insulator (SOI) structure. This type of structure results in an extremely low power dissipation and a very high switching speed due to the extremely low parasitic capacitance associated with the device. This MOSFET is also designed to be "power-tolerant", meaning that it can handle higher voltage levels without damage. It is also designed to be energy efficient, meaning that it can achieve a good performance without consuming a lot of energy.
The main application field of ZVN3310FTA is in power switching circuits. In these types of circuits, this type of MOSFET can be used as a switch to control the flow of electric current. It works by using electronic signals to open and close a circuit. The open state reduces the flow of current and the close state increases the flow of current.
The working principle of ZVN3310FTA is based on the transistor concept. It uses a gate voltage to control the conduction of electrons between the source and the drain terminals. The voltage level of the gate voltage determines whether the device will be in the open or closed state. Generally, when the gate voltage is low, the device will be in the open state and when the gate voltage is high, the device will be in the close state.
The device also has an internal threshold voltage (Vth) which is used to control the conduction of electrons between the source and the drain terminals. Generally when the gate voltage is greater than the Vth, the device will be in the close state. The threshold voltage is adjustable depending on the application.
ZVN3310FTA is a very useful type of MOSFET for numerous electronic applications. Its high frequency performance and low power dissipation make it an ideal choice for many applications. It is also easy to use and requires minimal external components for operation. Therefore, it can be used for a wide range of products, from simple electronic switches to complex power converters.
The specific data is subject to PDF, and the above content is for reference
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