-40 to 85c, 2016, 25ppm, 1.8v, 5 - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SIA477EDJT-T1-G E3TR-ND	SIA477EDJT-T1-G E3	Vishay Siliconix	View more Series: TrenchFET Gen III Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 13 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 6V Power Dissipation (Max): 19W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SC-70-6 Single Package / Case: PowerPAK SC-70-6	1000 Order	3000+: $0.1168
296-37781-2-ND	CSD17483F4T	Texas Instruments	View more Series: FemtoFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 8V Vgs(th) (Max) @ Id: 1.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN Base Part Number: CSD17483	500 Order	--
568-11040-1-ND	BSH121,135	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Power Dissipation (Max): 700mW (Tc) Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323-3 Package / Case: SC-70, SOT-323	6 Order	1+: $0.4095
SI4800BDY-T1-E3 TR-ND	SI4800BDY-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Vgs (Max): 25V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	454 Order	--
296-44075-2-ND	CSD17308Q3T	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 14A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Rds On (Max) @ Id, Vgs: 10.3 mOhm @ 10A, 8V Vgs(th) (Max) @ Id: 1.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V Power Dissipation (Max): 2.7W (Ta), 28W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Package / Case: 8-PowerTDFN	3250 Order	250+: $0.391 500+: $0.3455 750+: $0.3019 1250+: $0.2728
DMN3029LFG-7DIT R-ND	DMN3029LFG-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 18.6 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	2000 Order	--
296-45087-2-ND	CSD13385F5T	Texas Instruments	View more Series: FemtoFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 19 mOhm @ 900mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 6V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	500 Order	250+: $0.1903 500+: $0.161 750+: $0.139 1250+: $0.1244
SQA410EJ-T1_GE3 TR-ND	SQA410EJ-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 7.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 10V Power Dissipation (Max): 13.6W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SC-70-6 Single Package / Case: PowerPAK SC-70-6	1000 Order	3000+: $0.1497
SI3433CDV-T1-GE 3TR-ND	SI3433CDV-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 38 mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	--
SI4866BDY-T1-GE 3TR-ND	SI4866BDY-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 21.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 12A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 5020pF @ 6V Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
1727-2703-2-ND	PMPB12UNEX	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 11.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.9A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V Power Dissipation (Max): 470mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	1000 Order	3000+: $0.1309
SI4196DY-T1-GE3 -ND	SI4196DY-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 27 mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V Power Dissipation (Max): 2W (Ta), 4.6W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
NTLJS4159NT1G-N D	NTLJS4159NT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 35 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 15V Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WDFN (2x2) Package / Case: 6-WDFN Exposed Pad	1000 Order	1+: $0
SI1065X-T1-GE3T R-ND	SI1065X-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 156 mOhm @ 1.18A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 6V Power Dissipation (Max): 236mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666	1000 Order	1+: $0
SI7107DN-T1-GE3 TR-ND	SI7107DN-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 9.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 450A Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Vgs (Max): 8V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK 1212-8 Package / Case: PowerPAK 1212-8	1000 Order	--
SI6473DQ-T1-E3- ND	SI6473DQ-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.5A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250A (Min) Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V Vgs (Max): 8V Power Dissipation (Max): 1.08W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	1000 Order	1+: $0
DMN2058U-7-ND	DMN2058U-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 10V Power Dissipation (Max): 1.13W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
ZVN4424ASTOA-ND	ZVN4424ASTOA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 1mA Vgs (Max): 40V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Power Dissipation (Max): 750mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	1000 Order	1+: $0
SI5858DU-T1-E3T R-ND	SI5858DU-T1-E3	Vishay Siliconix	View more Series: LITTLE FOOT Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.3W (Ta), 8.3W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Dual Package / Case: PowerPAK ChipFET Dual	1000 Order	1+: $0
SI5471DC-T1-GE3 TR-ND	SI5471DC-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2945pF @ 10V Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET Package / Case: 8-SMD, Flat Lead	6000 Order	3000+: $0.1996
SSM3K339RLFTR-N D	SSM3K339R,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Rds On (Max) @ Id, Vgs: 185 mOhm @ 1A, 8V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.2V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	96000 Order	3000+: $0.058
SI2305CDS-T1-GE 3TR-ND	SI2305CDS-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 4V Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 Base Part Number: SI2305	6000 Order	--
SI1013R-T1-GE3T R-ND	SI1013R-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250A (Min) Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Vgs (Max): 6V Power Dissipation (Max): 150mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75A Package / Case: SC-75A	138000 Order	--
DMN62D0U-7DITR- ND	DMN62D0U-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 380mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 2 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Power Dissipation (Max): 380mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	3000 Order	--
DMP31D0U-7DITR- ND	DMP31D0U-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 530mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 1 Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 76pF @ 15V Power Dissipation (Max): 450mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	9000 Order	--
CPH3448-TL-WOST R-ND	CPH3448-TL-W	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
SI4403DDY-T1-GE 3TR-ND	SI4403DDY-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Gen III Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 15.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 14 mOhm @ 9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 99nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 10V Power Dissipation (Max): 5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.1168
BSS87H6327FTSA1 TR-ND	BSS87H6327FTSA1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 108A Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 97pF @ 25V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89-4-2 Package / Case: TO-243AA	2000 Order	1000+: $0.1238
DMG3415UDITR-ND	DMG3415U-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 39 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 10V Power Dissipation (Max): 900mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
PMF63UNEAX-ND	PMF63UNEAX	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 65 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.85nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 289pF @ 10V Power Dissipation (Max): 395mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70 Package / Case: SC-70, SOT-323	1000 Order	1+: $0
296-39995-2-ND	CSD17577Q3A	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 15V Power Dissipation (Max): 2.8W (Ta), 53W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (3x3.15) Package / Case: 8-PowerVDFN	15000 Order	--
DMN2230UQ-7DITR -ND	DMN2230UQ-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 10V Power Dissipation (Max): 600mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	3000+: $0.0822
1727-1367-2-ND	PMPB19XP,115	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 7.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 43.2nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 10V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	1000 Order	3000+: $0.105
DMP22D6UTDITR-N D	DMP22D6UT-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 430mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Power Dissipation (Max): 150mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	15000 Order	--
SI3442BDV-T1-E3 TR-ND	SI3442BDV-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 57 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 10V Power Dissipation (Max): 860mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	12000 Order	--
1727-1243-2-ND	PMZB350UPE,315	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 450 mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 127pF @ 10V Power Dissipation (Max): 360mW (Ta), 3.125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1006B (0.6x1) Package / Case: 3-XFDFN	10000 Order	10000+: $0.0751
1727-1379-2-ND	PMZB370UNE,315	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 490 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.05V @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.16nC @ 15V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 25V Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1006B (0.6x1) Package / Case: 3-XFDFN	1000 Order	10000+: $0.0751
MCH3476-TL-HOST R-ND	MCH3476-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 125 mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V Power Dissipation (Max): 800mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70FL/MCPH3 Package / Case: 3-SMD, Flat Leads	3000 Order	--
296-38336-2-ND	CSD17577Q3AT	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 15V Power Dissipation (Max): 2.8W (Ta), 53W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (3x3.15) Package / Case: 8-PowerVDFN	750 Order	--
TSM2301BCXRFGTR -ND	TSM2301BCX RFG	Taiwan Semiconductor Corporation	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 6V Power Dissipation (Max): 900mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--

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