SI7107DN-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7107DN-T1-GE3 is a high speed, low voltage N-channel, power MOSFET with advanced features and a wide range of applications. It is an ideal device for use in power conversion, DC/DC power supplies, digital power management and numerous other applications. Typical applications include voltage regulation, motor control, power supply, power management and energy conversion.

The SI7107DN-T1-GE3 is a PowerTrench MOSFET, which utilizes advanced technology to increase the device\'s power efficiency and reduce power loss. The device is designed with a proprietary edge termination scheme which involves the use of an ultra-thin, lightly-doped layer between the active and the termination area. This layer allows for higher efficiency by improving the current transfer of the source drain side electrons. Additionally, the edge termination scheme also reduces power loss and noise during switching.

The MOSFET also features an Advanced Unit-Cell technology, which provides improved performance without the use of additional die size. This technology gives the SI7107DN-T1-GE3 the advantage of higher integration, resulting in cost savings and better power efficiency. The device is also designed to maximize performance in a wide range of operating conditions, with improved on-resistance, low gate threshold voltages, and fast switching performance.

The SI7107DN-T1-GE3 utilizes a trench gate structure to provide a low forward-on resistance, as well as fast switching speeds. The device also features an optimized source/drain resistance to provide improved current flow. Further, power management circuitry incorporated into the device protects it against under-voltage conditions. This is done by sensing the junction temperature and adjusting the gate threshold voltage to maintain the power device’s temperature within limits.

The SI7107DN-T1-GE3 is a highly efficient device, and its applications include power conversion, DC/DC power supplies, digital power management, LED backlighting, and energy conversion. It can also be used in motor control and automotive applications, such as lamp and power window control. Additionally, it can be used in solar panel applications, where its fast switching performance makes it well suited for inverter designs.

In conclusion, the SI7107DN-T1-GE3 is a highly efficient power MOSFET with a wide range of applications. It utilizes an advanced edge termination scheme and optimized source/drain resistance for improved current transfer, low on-resistance, and low gate threshold voltage. It also features an optimized unit cell technology, providing higher integration and improved performance. The device is suitable for numerous applications, due to its high efficiency and fast switching performance.

The specific data is subject to PDF, and the above content is for reference