TSM2301BCX RFG

Vgs(th) (Max) @ Id:	950mV @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	900mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	415pF @ 6V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	4.5nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	100 mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2.8A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction:

TSM2301BCX RFG is a general-purpose power amplifier N-channel enhancement mode metal-oxide semiconductor field-effect transistor (MOSFET) designed to optimize power output and control of signals from low to medium frequency. This device is suitable for use in high frequency pulse switching and linear applications.

Application Field and Working Principle

TSM2301BCX RFG is suitable for both low and medium frequency power amplification applications. The device is designed for push-pull, bridge and single ended RF amplifier applications. This general-purpose power amplifier features high power output, low noise and low saturation voltage for linear and power amplification applications with low to medium frequency signals.The working principle behind the device is that it uses an enhancement-mode metal-oxide semiconductor field-effect transistor (MOSFET) to regulate the flow of electric current. When applying a voltage to the gate of the MOSFET, current will pass through the source to the drain. The amount of current that can pass through the MOSFET is determined by the voltage applied to the gate, which is referred to as the gate bias. By controlling the gate bias, the TSM2301BCX RFG can precisely control the power output and linear amplification in applications where low to medium frequency signals are applied.

Features and Benefits

The TSM2301BCX RFG offers many features and benefits that make it well-suited for use in low to medium frequency power amplification applications. The device offers high power output, low noise and low saturation voltage, while maintaining an optimally controlled signal. This ensures that the power output and linearity of the signal is maximized while minimizing distortion. The device has a rugged construction and can withstand a high operating temperature range of -65°C to +150°C, making it suitable for use in a variety of environments.In addition, the device features a rugged avalanche characteristics for high-gain operation and low power dissipation for power savings. The device also has a strong gate charging capability, ensuring fast switching times and high speed. This makes the device ideal for high frequency pulse switching applications.

Applications

The versatile capabilities of the TSM2301BCX RFG make it suitable for use in a variety of applications. The device is ideally suited for use in high frequency pulse switching applications, such as motor control, power controllers and switchmode power supplies. It is also suitable for use in linear applications, such as audio power amplifiers and instrumentation amplifiers.

Conclusion

The TSM2301BCX RFG is a general-purpose power amplifier N-channel enhancement mode metal-oxide semiconductor field-effect transistor (MOSFET). The device offers high power output, low noise and low saturation voltage, while maintaining an optimally controlled signal, making it suitable for use in a variety of applications, including high frequency pulse switching and linear applications.

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