BSS87H6327FTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSS87H6327FTSA1TR-ND |
Manufacturer Part#: |
BSS87H6327FTSA1 |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 240V 260MA SOT-89 |
More Detail: | N-Channel 240V 260mA (Ta) 1W (Ta) Surface Mount PG... |
DataSheet: | BSS87H6327FTSA1 Datasheet/PDF |
Quantity: | 2000 |
1000 +: | $ 0.12378 |
Series: | SIPMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 240V |
Current - Continuous Drain (Id) @ 25°C: | 260mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 260mA, 10V |
Vgs(th) (Max) @ Id: | 1.8V @ 108µA |
Gate Charge (Qg) (Max) @ Vgs: | 5.5nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 97pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-SOT89-4-2 |
Package / Case: | TO-243AA |
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A BSS87H6327FTSA1 is a single-gate field-effect transistor (FET), specifically a Metal-Oxide-Semiconductor FET (MOSFET). It is a type of power transistor device used to control and regulate electrical properties in a circuit. These properties are mainly resistor-to-gate, current, voltage and resonance characteristics of a circuit.
FETs are voltage-controlled devices with a high input admittance, meaning that a small change in input voltage can cause a large change in current between source and drain. FETs, such as the BSS87H6327FTSA1, have a simple construction and design in comparison to bipolar junction transistors (BJTs) and junction field-effect transistors (JFETs).
The BSS87H6327FTSA1 has an N-channel MOSFET with a drain current of 225 mA and a drain-to-source voltage of 30 V, making it suitable for low-voltage and low-power applications. It is mainly used ina number of power applications, such as amplifiers, motor control, synchronous rectification, and switching power supplies.
When used in an oscillator circuit, a BSS87H6327FTSA1 provides stable, efficient performance due to its high transconductance. It also has a fast turn-on time, making it well-suited for applications requiring quick switching.
The operation and working principle of a FET is basically the same as a BJT. The main difference is that, in the FET, gate voltage controls the current flow between source and drain. When the gate voltage is increased, more current is allowed to flow from source to drain, and when the gate voltage is decreased, current flow is decreased.
In a FET, current flows due to the band gap between the gate and the channel. When a positive gate voltage is applied, opposite charges are created in the channel, which attracts the majority carriers towards the gate. The majority carriers are usually electrons or holes, depending on the type of FET. When the gate voltage reaches a certain level, a threshold voltage, the majority carriers begin to flow through the channel, resulting in a flow of current from source to drain.
The BSS87H6327FTSA1 is a sophisticated device with a number of applications. Its low-voltage and low-power design make it perfect for powering low-power devices and electronics, such as smartphones and tablets. Its fast switching and high transconductance make it well-suited for oscillator circuits, motor control, and switching power supplies.
The specific data is subject to PDF, and the above content is for reference
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