SI4196DY-T1-GE3

SI4196DY-T1-GE3 is a part of power MOSFET products that belong to the FETs, MOSFETs, and Single category. This device is the N-channel enhancement type power MOSFET which is designed to provide fast switching capability and extremely low RDS(ON) for low voltage applications. It has advanced process technology which improves the device characteristics and optimizes the device to ensure superb performance and long life operation. In addition, it can be used in a variety of applications and systems due to its low source-drain diode forward voltage drop and low gate capacitance.

Application Fields

The SI4196DY-T1-GE3 MOSFET device is suitable for use in industrial and commercial applications include, but not limited to, lighting control, home automation, gate drivers, smart switches, solar power systems and automotive applications. The device can be used in the power circuit design and high-frequency switching applications. It is also suitable for high power switching in the Audio industry and is ideal for the design of power inverters, power supplies, and speed controllers. The device is also suitable in sensitive circuits such as protection circuits, and opamps and amplifier designs.

Working Principle

The SI4196DY-T1-GE3 MOSFET is a voltage-controlled device. It works by allowing current to flow between source and drain when the voltage applied to the gate-source junction exceeds a certain threshold voltage. When the voltage applied to the terminals is below the threshold voltage, the channel becomes pinched off and no current flows through the device. It offers very low resistance when the voltage applied is higher than the threshold voltage allowing less power consumption and higher efficiency.

The device works on the principle of majority carrier based conduction in the source-drain channel. When an electric field is applied, a linear voltage gradient is created between the source and drain terminals. This results in the charge carriers (electrons and holes) from the source terminal flow to the drain terminal, forming a conducting channel. During this operation, the current flow is proportional to the voltage applied.

The Gate terminal of the device is insulated from the drain and source terminals by a thin oxide layer. When a positive gate voltage is applied on the gate terminal, it induces a negative charge on it which attracts the positive charge carriers from the source terminal to the gate region, thus forming a conducting channel from the source to the drain. When the gate voltage is reversed, the charge carriers move away from the gate terminal and the channel is pinched off, thus blocking the current flow.

Device Characteristics

The SI4196DY-T1-GE3 MOSFET is an N-channel enhancement type power MOSFET. It has a low source-drain diode forward voltage drop, which ensures low power dissipation. In addition, the low gate-source capacitance reduces the turn-on and turn-off times. The device is also insulated with a silicon dioxide layer which helps reduce the leakage current. Furthermore, the high transconductance, low output resistance, and fast switching capabilities make it is ideal for high-frequency switching applications. The high current flow of up to 52A and RDS(ON) of 10.5mΩ ensure superior performance.

Conclusion

In conclusion, the SI4196DY-T1-GE3 MOSFET is a reliable and efficient N-channel enhancement type power MOSFET device which has superior performance as it offers fast switching, low RDS(ON), and high current flow. It can be used in a variety of applications and systems and is suitable for high power switching applications, sensitive circuits, and amplifier designs.