CSD13385F5T

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The CSD13385F5T is a high speed N-channel enhancement MOSFET designed to offer low RDS(on) and low forward transconductance, while maintaining optimum power dissipation over a wide range of base drive levels. This is a modern device capable of providing excellent performance in both analog and digital high-speed switching applications.The device has a very low reverse transfer capacitance, making it suitable for high frequency switching applications such as Class D amplifiers and switching power supplies, as well as for RF power control applications. Its simple package design and small size make it very suitable for automotive and industrial applications and its VGS range from -4V to 12V makes it suitable for ultra-low side gate driving applications.In terms of its application field, the CSD13395F5T can be used in both high and low voltage circuits, and it is suitable for high-speed switching and for analog and digital applications. In addition, it can be used for switching applications in automotive and industrial electronics. Moreover, the device is well suited for power control applications such as Class D amplifiers and switching power supplies, as well as for RF power control applications.As far as its working principle is concerned, the device is constructed with a gate oxide layer and a semiconductor layer. The gate oxide layer acts as a dielectric and insulates the gate and the source region of the MOSFET, while the semiconductor layer makes up the body of the MOSFET. When a voltage is applied to the gate, it controls the amount of current flowing between the source and the drain of the MOSFET. This is known as the MOSFET\'s transconductance, which is the ratio of the drain curent to the corresponding gate voltage.The MOSFET is considered to be "enhancement-mode", as it requires a gate voltage to activate it and induce current flow. In this MOSFET, the gate voltage must be greater than the threshold voltage for conduction to begin. The threshold voltage of the CSD13385F5T is 3V, and the maximum junction temperature (Tj) is 150°C. The maximum channel temperature (Tch) of the CSD13385F5T is 100°C. This MOSFET offers a very low dynamic resistance of just 0.013 Ω. In summary, the CSD13385F5T is a high speed N-channel enhancement MOSFET designed to offer low RDS(on) and low forward transconductance, while maintaining optimum power dissipation over a wide range of base drive levels. It can be used for a variety of high and low voltage circuits and its VGS range from -4V to 12V makes it suitable for ultra-low side gate driving applications. The device has a very low reverse transfer capacitance, making it suitable for high frequency switching applications such as Class D amplifiers and switching power supplies, as well as for RF power control applications.

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