
Allicdata Part #: | DMN3029LFG-7DITR-ND |
Manufacturer Part#: |
DMN3029LFG-7 |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 5.3A PWRDI333-8 |
More Detail: | N-Channel 30V 5.3A (Ta) 1W (Ta) Surface Mount Powe... |
DataSheet: | ![]() |
Quantity: | 2000 |
1 +: | $ 0.15000 |
10 +: | $ 0.14550 |
100 +: | $ 0.14250 |
1000 +: | $ 0.13950 |
10000 +: | $ 0.13500 |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | PowerDI3333-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 580pF @ 15V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 11.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 18.6 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN3029LFG-7 is a type of field effect transistor, more specifically a MOSFET, that is commonly used in many types of electronic systems. A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of transistor that utilizes a gate in order to control the flow of current between the source and the drain, and the DMN3029LFG-7 is a type of Enhancement Mode MOSFET. This type of MOSFET is ideal for applications such as DC/DC converters, switching power supplies, DC motor control, switching regulators, and more.
The DMN3029LFG-7 is manufactured in a standard Plastic Packaging, and it has power dissipation of up to 180W. The maximum diode forward voltage drop is also relatively low at 0.88V, and it has an on-state resistance of 0.9 ohm. These features make it ideal for applications that require a high-power, low-loss MOSFET. The DMN3029LFG-7 also has a fast switching speed, which can be especially useful in applications that require a quick response time.
In order to understand how a DMN3029LFG-7 works and what makes it different from other transistors, it is important to understand the difference between enhancement and depletion mode MOSFETs. Enhancement mode MOSFETs, such as the DMN3029LFG-7, have an insulated gate that does not conduct electricity until a certain amount of voltage is applied to the gate. When this voltage is applied, it creates a depletion region between the source and the drain terminals, allowing current to flow from the source to the drain. In terms of the DMN3029LFG-7, this means that when a positive voltage is applied to the gate, current will flow from the source to the drain, and when a negative voltage is applied to the gate, current will no longer flow.
The DMN3029LFG-7 is also known for its low “on” state resistance (RDSon). This is the resistance between the source and the drain when the voltage applied to the gate is sufficient to allow current to flow. The relatively low RDSon of the DMN3029LFG-7 of 0.9 ohms is incredibly useful for applications requiring a low loss in order to achieve maximum efficiency.
In conclusion, the DMN3029LFG-7 is a type of Single MOSFET that offers a number of useful features for applications requiring a high power, low loss transistor. It has a relatively low forward voltage drop, a fast switching speed, and a low RDSon, making it ideal for DC/DC converters, switching power supplies, DC motor control, and switching regulators. It is also designed for use in standard plastic packages, allowing users to easily integrate it into their circuit design.
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