CSD17577Q3AT

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The CSD17577Q3AT is a high voltage, n-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in a variety of industries, including automotive, industrial, audio, and power processing applications. It is ideal for use in space-constrained high voltage and power management applications.

MOSFETs are an important component in many applications due to their ability to switch large currents with very low power consumption. The CSD17577Q3AT is capable of switching currents of up to 74A at voltages of up to 650V. This makes it an ideal choice for high voltage and power management applications in automotive, industrial, audio and power processing.

The CSD17577Q3AT is designed with a high level of robustness, making it well suited for high temperature, high vibration and high reliability applications. It is also designed to meet the stringent requirements of the automotive industry for use in automotive, industrial, audio and power processing applications.

The CSD17577Q3AT features an optimized gate to source threshold voltage (G-S) of -3.5V, which enables optimal operation for high voltage switching applications. The device also features a low gate parasitic capacitance of only 75 picofarads (pF). This low capacitance minimizes device power loss during switching, which helps to improve overall system efficiency.

In addition, the CSD17577Q3AT features a low on-resistance of 18 milliohms (mΩ). This low on-resistance helps to reduce power losses when the device is on and helps to improve system efficiency. The device also features very low gate drive losses, making it ideal for high efficiency switching applications.

The CSD17577Q3AT is designed to use a snap-back body diode, which helps to improve switching speeds. The device also features a protection diode which is designed to protect the MOSFET from over-voltage and over-current conditions. This helps to improve device reliability in harsh environments.

The CSD17577Q3AT features a robust package size of 10x4mm, making it ideal for space-constrained applications. The device is also lead-free and RoHS compliant.

The CSD17577Q3AT is a versatile MOSFET which is ideal for use in high voltage and power management applications. It features a low on-resistance, robust package size, low gate parasitic capacitance, protection diode and snap-back body diode, making it an ideal choice for space-constrained high voltage and power management applications.

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