SIA477EDJT-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIA477EDJT-T1-GE3 is a single gate MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) commonly used in applications such as DC-DC conversion and voltage regulation. This type of transistor is designed to handle high current, low voltage applications and has the ability to switch signals up to 20 V and 4A. It is also suitable for use in switching power supplies and other applications requiring very low voltage and low-power operation.

The SIA477EDJT-T1-GE3 is a p-channel MOSFET, meaning that the voltage between the drain and the source increases as the voltage at the gate increases. This type of MOSFET is preferred for applications which require higher voltages than the source can provide. It is important to note, however, that operation in the opposite direction, where the drain is at a lower voltage than the source, is not recommended.

The SIA477EDJT-T1-GE3 operates on the principle of electron tunneling. Electron tunneling is a process by which electrons are able to pass through a barrier as if it were not there. In the case of the SIA477EDJT-T1-GE3, the barrier is a thin insulation layer between the gate and the channel, which prevents the electrons from passing through. When a voltage is applied to the gate, the electrons are forced to "tunnel" through this barrier and enter the channel, allowing current to flow.

In applications where the SIA477EDJT-T1-GE3 is used as a switch, current can be cut off when the voltage on the gate decreases to zero. In this case, the electron tunneling effect reverses, causing the electrons to leave the channel and close the gate. This makes the SIA477EDJT-T1-GE3 an effective switch for controlling the flow of electricity in applications such as motor control, LED lighting, and DC motor control.

The SIA477EDJT-T1-GE3 is also well suited for applications where low-power operation is desired. It is designed to handle currents of up to 4A and has the ability to switch circuits at lower voltages than traditional transistors. This makes it ideal for use in battery-powered applications such as remote control systems, wearable electronics, and solar power generation.

The SIA477EDJT-T1-GE3 is an efficient and reliable MOSFET with excellent switching capabilities. It is an ideal choice for applications requiring high current, low voltage, and low-power operation. It is a great choice for both manufacturing and experimental purposes, and its reliability and ease of use make it the ideal solution for a wide range of circuit design applications.

The specific data is subject to PDF, and the above content is for reference