3a output photocoupler - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
PMN40UPEAX-ND	PMN40UPEAX	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 10V Power Dissipation (Max): 500mW (Ta), 8.33W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	1000 Order	1+: $0
ZVN4306GVTR-ND	ZVN4306GVTA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 2.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power Dissipation (Max): 3W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	2000 Order	--
497-13970-5-ND	STP10N60M2	STMicroelectronics	View more Series: MDmesh II Plus Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V Power Dissipation (Max): 85W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1000 Order	--
SFT1443-TL-WOST R-ND	SFT1443-TL-W	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 225 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 20V Power Dissipation (Max): 1W (Ta), 19W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK/TP-FA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1400 Order	--
SIA817EDJ-T1-GE 3TR-ND	SIA817EDJ-T1-GE 3	Vishay Siliconix	View more Series: LITTLE FOOT Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 65 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SC-70-6 Dual Package / Case: PowerPAK SC-70-6 Dual	9000 Order	3000+: $0.1268
IRFR430ATRLPBF- ND	IRFR430ATRLPBF	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	3000+: $0.6015
1727-2689-2-ND	PMCM6501VPEZ	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 29.4nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V Power Dissipation (Max): 556mW (Ta), 12.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WLCSP (1.48x.98) Package / Case: 6-XFBGA, WLCSP	1000 Order	4500+: $0.1615
497-13833-5-ND	STF9N60M2	STMicroelectronics	View more Series: MDmesh II Plus Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 780 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 100V Power Dissipation (Max): 20W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	549 Order	1+: $1.1718 50+: $0.9455 100+: $0.8509 500+: $0.6618 1000+: $0.5484
SIHB6N65E-GE3TR -ND	SIHB6N65E-GE3	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V Power Dissipation (Max): 78W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.6513
497-2786-5-ND	STP6NB90	STMicroelectronics	View more Series: PowerMESH Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power Dissipation (Max): 135W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
STS6PF30L-ND	STS6PF30L	STMicroelectronics	View more Series: STripFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 25V Power Dissipation (Max): 2.5W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
SUD06N10-225L-E 3TR-ND	SUD06N10-225L-E 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Power Dissipation (Max): 1.25W (Ta), 20W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IXTM6N90A-ND	IXTM6N90A	IXYS	View more Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Power Dissipation (Max): 180W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3	1000 Order	1+: $0
RJK5026DPP-E0#T 2-ND	RJK5026DPP-E0#T 2	Renesas Electronics America	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Power Dissipation (Max): 28.5W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
NTGS3441PT1G-ND	NTGS3441PT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 110 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 15V Power Dissipation (Max): 510mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	1000 Order	1+: $0
IXTA6N50D2-ND	IXTA6N50D2	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 3A, 0V Gate Charge (Qg) (Max) @ Vgs: 96nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	413 Order	--
IXTH6N100D2-ND	IXTH6N100D2	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 3A, 0V Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	700 Order	1+: $4.5675 30+: $3.7428 120+: $3.3776 510+: $2.8299 1020+: $2.4648
497-13656-5-ND	STU7N80K5	STMicroelectronics	View more Series: SuperMESH5 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 100V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	2738 Order	1+: $2.9421 75+: $2.3637 150+: $2.1536 525+: $1.7439 1050+: $1.4707
NDF06N60ZGOS-ND	NDF06N60ZG	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 7.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1107pF @ 25V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	1000 Order	--
NDUL09N150CGOS- ND	NDUL09N150CG	ON Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2025pF @ 30V Power Dissipation (Max): 3W (Ta), 78W (Tc) Operating Temperature: 150C (TJ) Supplier Device Package: TO-3PF-3 Package / Case: TO-3P-3 Full Pack	88 Order	1+: $7.245 30+: $5.9409 120+: $5.3613 510+: $4.4919
SI1427EDH-T1-GE 3TR-ND	SI1427EDH-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 64 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V Vgs (Max): 8V Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	6000 Order	--
IXTH6N50D2-ND	IXTH6N50D2	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 3A, 0V Gate Charge (Qg) (Max) @ Vgs: 96nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	69 Order	1+: $4.5675 30+: $3.7428 120+: $3.3776 510+: $2.8299 1020+: $2.4648
DMN90H2D2HCTIDI -ND	DMN90H2D2HCTI	Diodes Incorporated	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1487pF @ 25V Power Dissipation (Max): 40W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB Package / Case: TO-220-3 Full Pack, Isolated Tab	13 Order	1+: $0.9891 50+: $0.7891 100+: $0.6905 500+: $0.5355 1000+: $0.4227
EMH1307-TL-H-ND	EMH1307-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 26 mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-EMH Package / Case: 8-SMD, Flat Lead	1000 Order	--
IXFT6N100Q-ND	IXFT6N100Q	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Power Dissipation (Max): 180W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	1000 Order	30+: $6.535
SIA446DJ-T1-GE3 TR-ND	SIA446DJ-T1-GE3	Vishay Siliconix	View more Series: ThunderFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 177 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SC-70-6 Single Package / Case: PowerPAK SC-70-6 Base Part Number: SIA446	1000 Order	3000+: $0.1702
SQ2319ADS-T1_GE 3TR-ND	SQ2319ADS-T1_GE 3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 20V Power Dissipation (Max): 2.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	3000 Order	--
IRFR430ATRPBFTR -ND	IRFR430ATRPBF	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
FCP850N80Z-ND	FCP850N80Z	ON Semiconductor	View more Series: SuperFET II Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 600A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1315pF @ 100V Power Dissipation (Max): 136W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	760 Order	1+: $1.8207 10+: $1.6462 100+: $1.3227 800+: $0.9288 1600+: $0.8524
869-1141-2-ND	CPH6341-TL-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 59 mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V Power Dissipation (Max): 1.6W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-CPH Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	--
568-7421-2-ND	PMN38EN,135	NXP USA Inc	View more Series: TrenchMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 25V Power Dissipation (Max): 1.75W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	1000 Order	1+: $0
IXTA6N100D2-ND	IXTA6N100D2	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 3A, 0V Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	70 Order	1+: $4.4226 50+: $3.5537 100+: $3.2378 500+: $2.6218 1000+: $2.2112
TSM500P02CXRFGT R-ND	TSM500P02CX RFG	Taiwan Semiconductor Corporation	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 50 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Power Dissipation (Max): 1.56W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	12000 Order	--
FQP6N40CF-ND	FQP6N40CF	ON Semiconductor	View more Series: FRFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V Power Dissipation (Max): 73W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	785 Order	--
SIHF6N65E-GE3-N D	SIHF6N65E-GE3	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V Power Dissipation (Max): 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	8 Order	--
497-14528-2-ND	STB10N60M2	STMicroelectronics	View more Series: MDmesh II Plus Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V Power Dissipation (Max): 85W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Base Part Number: STB10N60	1000 Order	--
CPH6347-TL-HX-N D	CPH6347-TL-HX	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 39 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V Power Dissipation (Max): 1.6W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-CPH Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	1+: $0
SSM3J328RLFTR-N D	SSM3J328R,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 29.8 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	1000 Order	3000+: $0.0626
TSM80N950CPROGT R-ND	TSM80N950CP ROG	Taiwan Semiconductor Corporation	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 691pF @ 100V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2500 Order	2500+: $0.5086
TSM2309CXRFGTR- ND	TSM2309CX RFG	Taiwan Semiconductor Corporation	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 30V Power Dissipation (Max): 1.56W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	3000+: $0.073

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