NDF06N60ZG

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The NDF06N60ZG is a high-voltage MOSFET that is well suited for switching applications. This MOSFET is capable of working well with a wide range of input voltages, from 24V to 1000V. With a maximum current rating of up to 60A and a breakdown voltage of up to 1700V this device provides excellent performance for many applications. In addition to its high performance, the device also offers a low gate charge and fast switching speed, making it a popular choice for a variety of applications.

The NDF06N60ZG mainly finds use in power conditioning, motor control, and other power-switching applications. It is used to control various loads with minimal losses and superior efficiency. This MOSFET is ideal for applications where high current carrying capabilities and reliable switching are essential such as in Brushless DC motors, AC Servo motors, relay replacement and speed control applications.

The NDF06N60ZG is a high voltage MOSFET with insulated (floating) Contact Gate Charge, which refers to its ability to create a stable, predetermined high voltage field across a desired area without relying on the peripheral circuit. This technology allows the device to operate at a high switching speed and prevents current leakage. The integrated insulated Contact Gate Charge also helps to reduce power dissipation and minimize on-resistance.

The NDF06N60ZG works on the principle of Electrochemical Migration (ECM), which is a phenomenon where ions migrate from one electrode to another. When a voltage is applied to the gate electrode, the ionic currents created by this voltage flow through the charge layer and generate an electric field. This electric field redistributes the charge of the gate region, which changes the channel characteristics, allowing either current flow or current blocking. By controlling the gate voltage, it\'s possible to control the flow of current in and out of the NDF06N60ZG.

The NDF06N60ZG has four terminals: Gate, Drain, Source, and Substrate. The input voltage is applied at the Gate terminal and it controls the other terminals. The Source terminal is the output terminal and when it is connected to the power source, the current will flow to the Drain terminal. The Substrate is commonly used as the device\'s return path, so that the current can circulate between all of the terminals. The charge that is applied to the Gate terminal is the most critical parameter of the device, as it determines the output characteristics of the device.

Overall, the NDF06N60ZG is an effective power switching MOSFET with excellent performance and reliability. This device is optimal for a wide range of switching and power conditioning applications. With its floating Contact Gate Charge, high breakdown voltage, fast switching speed and low on-resistance it is able to meet the demands of various demanding applications.

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