TSM80N950CP ROG Allicdata Electronics
Allicdata Part #:

TSM80N950CPROGTR-ND

Manufacturer Part#:

TSM80N950CP ROG

Price: $ 0.56
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CHANNEL 800V 6A TO252
More Detail: N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount TO-...
DataSheet: TSM80N950CP ROG datasheetTSM80N950CP ROG Datasheet/PDF
Quantity: 2500
2500 +: $ 0.50860
Stock 2500Can Ship Immediately
$ 0.56
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 691pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 950 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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  • TSM80N950CP ROG Application Field and Working Principle

  • TSM80N950CP ROG is a power MOSFET – or metal oxide semiconductor field effect transistor (MOSFET) – designed for power switching applications. It is a member of the robust, test-focused Reliability Rating (ROG) MOSFET family. This particular part has a specific threshold voltage of 7.1 volts.

    MOSFETs are insulated-gate field-effect transistors (IGFETs). They allow the current to flow between the source and drain terminals by control of the electric field in the gate region. Since the electric field is modulated instead of using a current, MOSFETs are considered voltage-controlled devices. This acting as a resistor, making them ideal for switching applications, especially in high-power applications.

    The TSM80N950CP is a widely used product in various power applications, particularly in switch-mode power supplies, for motor drive, for LED lighting, and for various high-voltage and power control solutions. It is designed with an ultra-low gate-charge to optimize performance, low gate-resistance to reduce switching losses, small size for increased design flexibility, and superior reliability.

    TSM80N950CP ROG contains a structural layer of metal-oxide gate which is necessary for a functional insulating layer, thus preventing the channel current from crossing it. It requires a voltage input, known as gate-source voltage, to create an electric field to control the flow of current. The control gate voltage can be negative, positive or zero.

    MOSFETs are preferred over other transistors due to their high switching time, low power dissipation and low static power loss. They have an advantage over other power devices, such as BJTs, due to the faster switching times, which can result in improved power efficiency.

    In addition, MOSFETs are much simpler to integrate with digital circuits as they require few external components, such as gate resistors or gate capacitors, for operation, resulting in lower power consumption and price. These characteristics make MOSFETs a versatile choice for many different power applications.

    The TSM80N950CP ROG is a powerful and reliable MOSFET suitable for a wide variety of power switching applications. It offers excellent electric field control, a high threshold voltage, a low gate-charge, low gate-to-drain capacitance, overvoltage protection, and superior dielectric strength. These attributes make it valuable in applications where dependability and reliability are essential.

The specific data is subject to PDF, and the above content is for reference

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