Allicdata Part #: | FQP6N40CF-ND |
Manufacturer Part#: |
FQP6N40CF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 400V 6A TO-220 |
More Detail: | N-Channel 400V 6A (Tc) 73W (Tc) Through Hole TO-22... |
DataSheet: | FQP6N40CF Datasheet/PDF |
Quantity: | 785 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 73W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 625pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | FRFET® |
Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FQP6N40CF is an industry-standard, high-ranking field-effect transistor. As a N-channel MOSFET, it provides a high switching speed, low On-resistance, low-temperature rise, and high gate-source current performance. This transistor is widely used in various electronic circuits, such as power-supply control, microcomputer-controlled circuits, telecommunication equipment, and high-side switching circuits.
The FQP6N40CF is composed of two elements: a source and a drain. The source acts as the input and supplies the electric current to the circuit, while the drain acts as the output to transport the electric current away from the circuit. The source and drain circuits are separated by the FET channel. The electric current that flows through the channel is controlled by the gate. As the voltage applied to the gate increases, the electric current through the FET channel increases accordingly.
To properly use this MOSFET, the user has to consider the power limitations of its package. The package has very low thermal resistance, so the user needs to be sure that the allowable dissipation of the transistor is not exceeded. This is done by calculating the junction temperature, which is the sum of the ambient temperature, the junction-to-ambient thermal resistance, and the power dissipation.
The working principle of the FQP6N40CF is there is a voltage applied to the gate of the FET channel, which modulates the electrical current flowing through the channel. The higher the applied voltage, the higher the electrical current through the channel. This MOSFET can be used to control the voltage or current of a circuit. It can be used as a switch, an amplifier, or an oscillator. Moreover, it can be used in the control or regulation of electrical and electronic circuits.
The FQP6N40CF can be used in various fields of applications, including power-supply control, motor control, DC power conversion, and power management for AC and DC solutions. It can also be used in industrial automation and robotics. Furthermore, this transistor can be used in battery-powered systems, such as portable devices and wearable devices. In addition, it can be applied in the control circuits of communications, medical, and navigation devices.
In summary, the FQP6N40CF is an N-channel MOSFET with an industry-standard package. It provides excellent high switching speed, low On-resistance, and low-temperature rise performance. Its working principle is that a voltage is applied to the gate of the FET channel, which modulates the electrical current flowing through the channel. This transistor is widely used in various fields, such as motor controls, DC power conversion, and industrial automation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQP6N50C | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 5.5A TO-... |
FQP6N60C_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 5.5A TO-... |
FQP6N40CF | ON Semicondu... | -- | 785 | MOSFET N-CH 400V 6A TO-22... |
FQP6N90C | ON Semicondu... | -- | 995 | MOSFET N-CH 900V 6A TO-22... |
FQP65N06 | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 65A TO-22... |
FQP6N15 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 150V 6.4A TO-... |
FQP630TSTU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 9A TO-22... |
FQP630 | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 9A TO-22... |
FQP6N25 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 250V 5.5A TO-... |
FQP6P25 | ON Semicondu... | -- | 1000 | MOSFET P-CH 250V 6A TO-22... |
FQP6N50 | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 5.5A TO-... |
FQP6N60 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 6.2A TO-... |
FQP6N80 | ON Semicondu... | -- | 1000 | MOSFET N-CH 800V 5.8A TO-... |
FQP6N90 | ON Semicondu... | -- | 1000 | MOSFET N-CH 900V 5.8A TO-... |
FQP6N80C | ON Semicondu... | -- | 870 | MOSFET N-CH 800V 5.5A TO-... |
FQP6N60C | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 5.5A TO-... |
FQP6N40C | ON Semicondu... | -- | 759 | MOSFET N-CH 400V 6A TO-22... |
FQP6N70 | ON Semicondu... | 0.92 $ | 1000 | MOSFET N-CH 700V 6.2A TO-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...