| Allicdata Part #: | IXTH6N100D2-ND |
| Manufacturer Part#: |
IXTH6N100D2 |
| Price: | $ 5.03 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1000V 6A TO247 |
| More Detail: | N-Channel 1000V 6A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: |  IXTH6N100D2 Datasheet/PDF |
| Quantity: | 700 |
| 1 +: | $ 4.56750 |
| 30 +: | $ 3.74283 |
| 120 +: | $ 3.37764 |
| 510 +: | $ 2.82990 |
| 1020 +: | $ 2.46475 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | Depletion Mode |
| Input Capacitance (Ciss) (Max) @ Vds: | 2650pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2.2 Ohm @ 3A, 0V |
| Drive Voltage (Max Rds On, Min Rds On): | -- |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drain to Source Voltage (Vdss): | 1000V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTH6N100D2 is a low-loss, high-speed vertical power MOSFET with ultra-low RDS(on) resistance. This product offers designers a wide range of advanced features and high performance in a single package.
The IXTH6N100D2 is a low-voltage N-channel MOSFET with extended drain E-mode operation. This MOSFET provides maximum design leverage by providing a low RDS(on) in a very small form factor. Due to its high-speed switching capability, the IXTH6N100D2 is well suited for high-frequency switching applications.
The IXTH6N100D2 is an E-mode MOSFET with very low on-state resistance and minimal switching losses. This product offers very low input capacitance, which makes the IXTH6N100D2 ideal for high-frequency and high-speed applications such as switching power supplies. The low conduction losses of this MOSFET help reduce system power dissipation, leading to a more efficient overall design.
The IXTH6N100D2 MOSFET is available in a small and compact TO-220AB package. This package has three main terminals: the source, gate, and drain. The source is used to supply current to the drain and the gate is used to control the flow of current between the source and the drain. The drain is where the current exits the device. The IXTH6N100D2 can be configured for operation in both the vertical and the lateral position.
The IXTH6N100D2 is a good choice for high-speed, high-frequency, and high-current applications. This MOSFET offers high switching speed and excellent performance, as well as low RDS(on) resulting in high power efficiency. Furthermore, the IXTH6N100D2 offers a wide range of technical features such as fast switching speed and very low on-state resistance.
Additionally, the IXTH6N100D2 is well suited for use in a range of automotive and industrial applications, including motor control, LED lighting, and power-supply rectification. Due to the low RDS(on) resistance, this MOSFET is well suited for use in power-conversion and motor-control circuits. The IXTH6N100D2 also has excellent thermal-capability ratings, making it suitable for use in high-temperature environments.
The working principle of the IXTH6N100D2 is similar to other MOSFETs. As the gate voltage increases, the channel between the source and the drain becomes more conductive, allowing for greater current flow through the device. The resistance of the channel is determined by the magnitude of the gate voltage. When the gate voltage increases beyond a certain point, the mosfet reaches its saturation region, effectively turning the device on. The amount of current that can flow through the device is determined by the channel size and the channel resistance of the device.
In conclusion, the IXTH6N100D2 is a vertical power MOSFET with low-RDS(on) and excellent performance. It is well suited for use in high-frequency, high-current, and high-temperature applications. Its excellent technical characteristics and wide range of features make it an ideal choice for a range of automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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