STB10N60M2

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The STB10N60M2 is a high-voltage, high-speed N-channel power MOSFET developed with Moody\'s exclusive STACOM structure. It is available in TO-220, TO-247 and SOT-227 packages. This type of MOSFET is typically used in reverse blocking and high-performance switching applications. This article will discuss the application field and working principle of the STB10N60M2.

Application Field

The STB10N60M2 is suitable for a wide range of application fields such as DC-DC converters, lighting, and industrial motor controls. It can also be used for renewable energy and automotive applications.

Power Loss

STB10N60M2 is designed to reduce power switching losses. Its on-state resistance is lower than that of standard MOSFETs, and its low gate charge makes it ideal for high-frequency switching applications. Its body diode also has excellent characteristics for reverse-blocking applications.

High Frequency Operation

The STB10N60M2 is capable of high-frequency operation, up to 20 kHz with low switching losses. Its lower gate charge allows for higher frequency operation, while its body diode ensures minimal reverse-recovery losses. Its performance over a wide range of operating temperatures ensures long-term reliability.

Drain-Source Voltage

The STB10N60M2 has a drain-source voltage of 600V and can handle up to 10A. This voltage and current capability makes it suitable for a wide range of power applications.

High Performance Switching

The STB10N60M2 is optimized for high-performance switching applications. Its fast switching times, low on-state resistance and low gate charge make it ideal for switching applications that require high speed and low power losses.

Tight Tolerances

The STB10N60M2 is designed to operate with tight tolerances. Its current and voltage ratings are highly accurate, which ensures that its performance is consistent, even over a wide range of operating temperatures.

Working Principle

The working principle of STB10N60M2 is based on an enhancement-mode N-channel MOSFET. It is composed of a gate, source and drain electrodes, and a body diode. When a negative gate voltage is applied to the gate electrode, current is allowed to flow from the source to the drain. When a positive gate voltage is applied, current is blocked from flowing from the source to the drain. The body diode ensures minimal power losses when switching from on-state to off-state operation.

Conclusion

The STB10N60M2 is a high-performance, high-voltage, N-channel MOSFET. Its optimized characteristics make it ideal for reverse blocking and high-performance switching applications. Its low gate charge, low on-state resistance and tight tolerances make it suitable for a wide range of power applications.

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