Allicdata Part #: | TSM2309CXRFGTR-ND |
Manufacturer Part#: |
TSM2309CX RFG |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET P-CHANNEL 60V 3.1A SOT23 |
More Detail: | P-Channel 60V 3.1A (Tc) 1.56W (Tc) Surface Mount S... |
DataSheet: | TSM2309CX RFG Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.07303 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.56W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 425pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.1A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TSM2309CX RFG is a single N-channel Enhancement Mode Power MOSFET originally designed and manufactured by TriQuint Semiconductor that has been enhanced and improved upon by the larger supplier ON Semiconductor due to their aquistion of TriQuint in 2015. This MOSFET is ideal for applications that require a high current switching performance as it has been designed with a high attractive resistance and low fast-switching drain-source capacitance. The part is also designed to have a low gate-charge, resulting in a reduced switching times and less power loss.
The TSM2309CX RFG is classed as a single N-channel Enhancement Mode MOSFET and as such, it utilizes an N-channel enhancement mode MOSFET construction. This type of design allows the user to switch the MOSFET on and off simply by changing the amount of voltage they apply to the gate. During normal operation with low gate voltages, the source of the MOSFET is connected to the drain and the transfer of current is blocked. With the application of a higher gate voltage, the source and the drain are no longer connected and current is able to pass through. This type of circuit is also known as an inverter and is commonly used in logic circuits due to its ability to provide a convenient binary signal (on or off).
As a result, the TSM2309CX RFG finds itself in a wide variety of electronics applications including embedded designs, switching power supplies, DC-DC converters, audio power amplifiers, motor drivers, and general purpose switching circuitry to name a few. This is thanks to its small size, large current capacity, and low power dissipation. The MOSFET also has an operating temperature range between -55 °C and 150 °C, allowing for reliable operation even in extreme conditions.
For those looking for even higher performance, the TSM2309CX RFG can also be purchased in the RFS package variant. The RFS package adds a new element to the design of the MOSFET, resulting in a better thermal performance, a lower power consumption, and a faster switching time. This makes it a great choice for consumer electronics and other high-performance applications.
In terms of pricing, the TSM2309CX RFG can be found online for relatively low cost, making it suitable for a wide variety of budget applications. It is also readily available from most major electronic component distributors, allowing for a quick turnaround time when buying in bulk or for prototyping purposes.
In conclusion, the TSM2309CX RFG is a versatile and reliable single N-channel Enhancement Mode Power MOSFET with a wide range of potential applications. Thanks to its small size, large current capacity and low power dissipation, it is an ideal choice for designs that require high current switching performance. It is also available in a variety of package types and for a low cost, making it suitable for most tasks.
The specific data is subject to PDF, and the above content is for reference
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